CARRIER TRANSPORT MECHANISMS IN A-SI-H,F/A-SI,GE-H,F SUPERLATTICES

被引：7

作者：

CONDE, JP

ALJISHI, S

SHEN, DS

ANGELL, M

WAGNER, S

机构：

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1987年 / 97-8卷

关键词：

D O I：

10.1016/0022-3093(87)90226-2

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：939 / 942

页数：4

共 10 条

[1] INFRARED-SPECTROSCOPY OF INTERFACES IN AMORPHOUS HYDROGENATED SILICON SILICON-NITRIDE SUPERLATTICES [J].

ABELES, B ;

YANG, L ;

PERSANS, PD ;

STASIEWSKI, HS ;

LANFORD, W .

APPLIED PHYSICS LETTERS, 1986, 48 (02) :168-170

[2]

ABELES B, 1983, PHYS REV LETT, V51, P2005

[3]

ALJISHI S, 1987, J NON-CRYST SOLIDS, V97-8, P1023, DOI 10.3979/j.issn.1673-825X.2010.05.005

[4]

CONDE JP, IN PRESS MAT RES SOC, V95

[5]

CONDE JP, IN PRESS MAT RES SOC, V77

[6] PROPERTIES OF A-SI,GE-H,F ALLOYS PREPARED BY RF GLOW-DISCHARGE IN AN ULTRAHIGH-VACUUM REACTOR [J].

KOLODZEY, J ;

ALJISHI, S ;

SCHWARZ, R ;

SLOBODIN, D ;

WAGNER, S .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (06) :2499-2504

[7] RAMAN-SCATTERING STUDY OF AMORPHOUS SI-GE INTERFACES [J].

PERSANS, PD ;

RUPPERT, AF ;

ABELES, B ;

TIEDJE, T .

PHYSICAL REVIEW B, 1985, 32 (08) :5558-5560

[8] DESIGNING NEW MATERIALS WITH AMORPHOUS-SEMICONDUCTORS - STRUCTURE AND ELECTRICAL-PROPERTIES OF MULTIPLY STACKED A-SI/A-SIGEX LAYERS [J].

SHIRAI, H ;

TANABE, A ;

HANNA, J ;

ODA, S ;

NAKAMURA, T ;

SHIMIZU, I .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (07) :L537-L539

[9]

TSUDA S, IN PRESS MAT RES SOC, V95

[10] ELECTRICAL TRANSPORT IN AMORPHOUS HYDROGENATED GE/SI SUPERLATTICES [J].

WRONSKI, CR ;

PERSANS, PD ;

ABELES, B .

APPLIED PHYSICS LETTERS, 1986, 49 (10) :569-571

← 1 →