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CURRENT DRIFTING BEHAVIOR IN INP MISFET WITH THERMALLY OXIDIZED INP/INP INTERFACE

被引：10
作者：
OKAMURA, M
KOBAYASHI, T
机构：
来源：
ELECTRONICS LETTERS | 1981年 / 17卷 / 25-2期
关键词：
D O I：
10.1049/el:19810658
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：941 / 942
页数：2
相关论文
共 6 条
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[2]  
Nishimatsu S., 1969, Thin film dielectrics, P338
[3]   IMPROVED INTERFACE IN INVERSION-TYPE INP-MISFET BY VAPOR ETCHING TECHNIQUE [J].
OKAMURA, M ;
KOBAYASHI, T .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (11) :2151-2156
[4]   SLOW CURRENT-DRIFT MECHANISM IN N-CHANNEL INVERSION TYPE INP-MISFET [J].
OKAMURA, M ;
KOBAYASHI, T .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (11) :2143-2150
[5]   THERMAL-OXIDATION OF INP [J].
WAGER, JF ;
WILMSEN, CW .
JOURNAL OF APPLIED PHYSICS, 1980, 51 (01) :812-814
[6]   ANALYSIS OF OXIDE-SEMICONDUCTOR INTERFACE USING AUGER AND ESCA AS APPLIED TO INP AND GAAS [J].
WILMSEN, CW ;
KEE, RW .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (04) :1513-1517
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