PHOTOLUMINESCENCE STUDIES IN BULK GALLIUM ANTIMONIDE

被引：28

作者：

DUTTA, PS

RAO, KSRK

BHAT, HL

KUMAR, V

机构：

[1] INDIAN INST SCI,DEPT PHYS,BANGALORE 560012,KARNATAKA,INDIA

[2] SOLID STATE PHYS LAB,DELHI 110054,INDIA

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1995年 / 61卷 / 02期

关键词：

78.55; Cr;

D O I：

10.1007/BF01538381

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A detailed analysis of PhotoLuminescence spectroscopy (PL) on undoped and Te- and Zn-doped samples of high-quality GaSb is presented. Temperature variations of PL peak position and intensity have been used to find the origin of various transitions. The PL peaks of undoped samples have been assigned to unintentional impurities, native defects and excitons bound to the defect. The zinc- and tellurium-related peaks have been identified and the effect of doping concentration on their position and PL efficiency have been studied.

引用

页码：149 / 152

页数：4

共 17 条

[1] PHOTOLUMINESCENCE STUDY OF GALLIUM ANTIMONIDE CRYSTALS GROWN BY VERTICAL BRIDGMAN METHOD [J].