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PHOTOLUMINESCENCE STUDY OF GALLIUM ANTIMONIDE GROWN BY LIQUID-PHASE EPITAXY
被引:52
作者
:
CHEN, SC
论文数:
0
引用数:
0
h-index:
0
CHEN, SC
SU, YK
论文数:
0
引用数:
0
h-index:
0
SU, YK
机构
:
来源
:
JOURNAL OF APPLIED PHYSICS
|
1989年
/ 66卷
/ 01期
关键词
:
D O I
:
10.1063/1.343880
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:350 / 353
页数:4
相关论文
共 17 条
[1]
ION-PAIRING BETWEEN LITHIUM AND RESIDUAL ACCEPTORS IN GASB
BAXTER, RD
论文数:
0
引用数:
0
h-index:
0
BAXTER, RD
BATE, RT
论文数:
0
引用数:
0
h-index:
0
BATE, RT
REID, FJ
论文数:
0
引用数:
0
h-index:
0
REID, FJ
[J].
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS,
1965,
26
(01)
: 41
-
&
[2]
AUGER RECOMBINATION IN GAAS AN GASB
BENZ, G
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV STUTTGART,INST PHYS,D-7000 STUTTGART 80,FED REP GER
UNIV STUTTGART,INST PHYS,D-7000 STUTTGART 80,FED REP GER
BENZ, G
CONRADT, R
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV STUTTGART,INST PHYS,D-7000 STUTTGART 80,FED REP GER
UNIV STUTTGART,INST PHYS,D-7000 STUTTGART 80,FED REP GER
CONRADT, R
[J].
PHYSICAL REVIEW B,
1977,
16
(02):
: 843
-
855
[3]
BENZ KW, 1981, GALLIUM ARSENIDE REL
[4]
TEMPERATURE-DEPENDENCE OF FUNDAMENTAL EDGE OF GERMANIUM AND ZINCBLENDE-TYPE SEMICONDUCTORS
CAMASSEL, J
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV SCI & TECH LANGUEDOC,CTR ETUDE ELECTR SOLIDES,34060 MONTPELLIER,FRANCE
CAMASSEL, J
AUVERGNE, D
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV SCI & TECH LANGUEDOC,CTR ETUDE ELECTR SOLIDES,34060 MONTPELLIER,FRANCE
AUVERGNE, D
[J].
PHYSICAL REVIEW B,
1975,
12
(08):
: 3258
-
3267
[5]
REDUCTION OF THRESHOLD CURRENT-DENSITY OF 2.2-MU-M GAINASSB/ALGAASSB INJECTION-LASERS
CANEAU, C
论文数:
0
引用数:
0
h-index:
0
CANEAU, C
SRIVASTAVA, AK
论文数:
0
引用数:
0
h-index:
0
SRIVASTAVA, AK
DENTAI, AG
论文数:
0
引用数:
0
h-index:
0
DENTAI, AG
ZYSKIND, JL
论文数:
0
引用数:
0
h-index:
0
ZYSKIND, JL
BURRUS, CA
论文数:
0
引用数:
0
h-index:
0
BURRUS, CA
POLLACK, MA
论文数:
0
引用数:
0
h-index:
0
POLLACK, MA
[J].
ELECTRONICS LETTERS,
1986,
22
(19)
: 992
-
993
[6]
THE LIQUID-PHASE EPITAXIAL-GROWTH OF LOW NET DONOR CONCENTRATION (5X1014-5X1015-CM3) GASB FOR DETECTOR APPLICATIONS IN THE 1.3-1.6 MU-M REGION
CAPASSO, F
论文数:
0
引用数:
0
h-index:
0
CAPASSO, F
PANISH, MB
论文数:
0
引用数:
0
h-index:
0
PANISH, MB
SUMSKI, S
论文数:
0
引用数:
0
h-index:
0
SUMSKI, S
[J].
IEEE JOURNAL OF QUANTUM ELECTRONICS,
1981,
17
(02)
: 273
-
274
[7]
CHARACTERIZATION AND GROWTH OF AL0.065GA0.935SB BY LIQUID-PHASE EPITAXY
CHEN, SC
论文数:
0
引用数:
0
h-index:
0
机构:
Natl Cheng Kung Univ, Taiwan
CHEN, SC
SU, YK
论文数:
0
引用数:
0
h-index:
0
机构:
Natl Cheng Kung Univ, Taiwan
SU, YK
JUANG, FS
论文数:
0
引用数:
0
h-index:
0
机构:
Natl Cheng Kung Univ, Taiwan
JUANG, FS
[J].
JOURNAL OF CRYSTAL GROWTH,
1988,
92
(1-2)
: 118
-
122
[8]
INGASBAS INJECTION-LASERS
DRAKIN, AE
论文数:
0
引用数:
0
h-index:
0
机构:
GIREDMET,MOSCOW,USSR
GIREDMET,MOSCOW,USSR
DRAKIN, AE
ELISEEV, PG
论文数:
0
引用数:
0
h-index:
0
机构:
GIREDMET,MOSCOW,USSR
GIREDMET,MOSCOW,USSR
ELISEEV, PG
SVERDLOV, BN
论文数:
0
引用数:
0
h-index:
0
机构:
GIREDMET,MOSCOW,USSR
GIREDMET,MOSCOW,USSR
SVERDLOV, BN
BOCHKAREV, AE
论文数:
0
引用数:
0
h-index:
0
机构:
GIREDMET,MOSCOW,USSR
GIREDMET,MOSCOW,USSR
BOCHKAREV, AE
DOLGINOV, LM
论文数:
0
引用数:
0
h-index:
0
机构:
GIREDMET,MOSCOW,USSR
GIREDMET,MOSCOW,USSR
DOLGINOV, LM
DRUZHININA, LV
论文数:
0
引用数:
0
h-index:
0
机构:
GIREDMET,MOSCOW,USSR
GIREDMET,MOSCOW,USSR
DRUZHININA, LV
[J].
IEEE JOURNAL OF QUANTUM ELECTRONICS,
1987,
23
(06)
: 1089
-
1094
[9]
GA1-XALXSB AVALANCHE PHOTO-DIODES - RESONANT IMPACT IONIZATION WITH VERY HIGH RATIO OF IONIZATION COEFFICIENTS
HILDEBRAND, O
论文数:
0
引用数:
0
h-index:
0
HILDEBRAND, O
KUEBART, W
论文数:
0
引用数:
0
h-index:
0
KUEBART, W
BENZ, KW
论文数:
0
引用数:
0
h-index:
0
BENZ, KW
PILKUHN, MH
论文数:
0
引用数:
0
h-index:
0
PILKUHN, MH
[J].
IEEE JOURNAL OF QUANTUM ELECTRONICS,
1981,
17
(02)
: 284
-
288
[10]
3-LEVEL OSCILLATOR - A NEW FORM OF TRANSFERRED-ELECTRON DEVICE
HILSUM, C
论文数:
0
引用数:
0
h-index:
0
HILSUM, C
REES, HD
论文数:
0
引用数:
0
h-index:
0
REES, HD
[J].
ELECTRONICS LETTERS,
1970,
6
(09)
: 277
-
&
←
1
2
→
共 17 条
[1]
ION-PAIRING BETWEEN LITHIUM AND RESIDUAL ACCEPTORS IN GASB
BAXTER, RD
论文数:
0
引用数:
0
h-index:
0
BAXTER, RD
BATE, RT
论文数:
0
引用数:
0
h-index:
0
BATE, RT
REID, FJ
论文数:
0
引用数:
0
h-index:
0
REID, FJ
[J].
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS,
1965,
26
(01)
: 41
-
&
[2]
AUGER RECOMBINATION IN GAAS AN GASB
BENZ, G
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV STUTTGART,INST PHYS,D-7000 STUTTGART 80,FED REP GER
UNIV STUTTGART,INST PHYS,D-7000 STUTTGART 80,FED REP GER
BENZ, G
CONRADT, R
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV STUTTGART,INST PHYS,D-7000 STUTTGART 80,FED REP GER
UNIV STUTTGART,INST PHYS,D-7000 STUTTGART 80,FED REP GER
CONRADT, R
[J].
PHYSICAL REVIEW B,
1977,
16
(02):
: 843
-
855
[3]
BENZ KW, 1981, GALLIUM ARSENIDE REL
[4]
TEMPERATURE-DEPENDENCE OF FUNDAMENTAL EDGE OF GERMANIUM AND ZINCBLENDE-TYPE SEMICONDUCTORS
CAMASSEL, J
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV SCI & TECH LANGUEDOC,CTR ETUDE ELECTR SOLIDES,34060 MONTPELLIER,FRANCE
CAMASSEL, J
AUVERGNE, D
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV SCI & TECH LANGUEDOC,CTR ETUDE ELECTR SOLIDES,34060 MONTPELLIER,FRANCE
AUVERGNE, D
[J].
PHYSICAL REVIEW B,
1975,
12
(08):
: 3258
-
3267
[5]
REDUCTION OF THRESHOLD CURRENT-DENSITY OF 2.2-MU-M GAINASSB/ALGAASSB INJECTION-LASERS
CANEAU, C
论文数:
0
引用数:
0
h-index:
0
CANEAU, C
SRIVASTAVA, AK
论文数:
0
引用数:
0
h-index:
0
SRIVASTAVA, AK
DENTAI, AG
论文数:
0
引用数:
0
h-index:
0
DENTAI, AG
ZYSKIND, JL
论文数:
0
引用数:
0
h-index:
0
ZYSKIND, JL
BURRUS, CA
论文数:
0
引用数:
0
h-index:
0
BURRUS, CA
POLLACK, MA
论文数:
0
引用数:
0
h-index:
0
POLLACK, MA
[J].
ELECTRONICS LETTERS,
1986,
22
(19)
: 992
-
993
[6]
THE LIQUID-PHASE EPITAXIAL-GROWTH OF LOW NET DONOR CONCENTRATION (5X1014-5X1015-CM3) GASB FOR DETECTOR APPLICATIONS IN THE 1.3-1.6 MU-M REGION
CAPASSO, F
论文数:
0
引用数:
0
h-index:
0
CAPASSO, F
PANISH, MB
论文数:
0
引用数:
0
h-index:
0
PANISH, MB
SUMSKI, S
论文数:
0
引用数:
0
h-index:
0
SUMSKI, S
[J].
IEEE JOURNAL OF QUANTUM ELECTRONICS,
1981,
17
(02)
: 273
-
274
[7]
CHARACTERIZATION AND GROWTH OF AL0.065GA0.935SB BY LIQUID-PHASE EPITAXY
CHEN, SC
论文数:
0
引用数:
0
h-index:
0
机构:
Natl Cheng Kung Univ, Taiwan
CHEN, SC
SU, YK
论文数:
0
引用数:
0
h-index:
0
机构:
Natl Cheng Kung Univ, Taiwan
SU, YK
JUANG, FS
论文数:
0
引用数:
0
h-index:
0
机构:
Natl Cheng Kung Univ, Taiwan
JUANG, FS
[J].
JOURNAL OF CRYSTAL GROWTH,
1988,
92
(1-2)
: 118
-
122
[8]
INGASBAS INJECTION-LASERS
DRAKIN, AE
论文数:
0
引用数:
0
h-index:
0
机构:
GIREDMET,MOSCOW,USSR
GIREDMET,MOSCOW,USSR
DRAKIN, AE
ELISEEV, PG
论文数:
0
引用数:
0
h-index:
0
机构:
GIREDMET,MOSCOW,USSR
GIREDMET,MOSCOW,USSR
ELISEEV, PG
SVERDLOV, BN
论文数:
0
引用数:
0
h-index:
0
机构:
GIREDMET,MOSCOW,USSR
GIREDMET,MOSCOW,USSR
SVERDLOV, BN
BOCHKAREV, AE
论文数:
0
引用数:
0
h-index:
0
机构:
GIREDMET,MOSCOW,USSR
GIREDMET,MOSCOW,USSR
BOCHKAREV, AE
DOLGINOV, LM
论文数:
0
引用数:
0
h-index:
0
机构:
GIREDMET,MOSCOW,USSR
GIREDMET,MOSCOW,USSR
DOLGINOV, LM
DRUZHININA, LV
论文数:
0
引用数:
0
h-index:
0
机构:
GIREDMET,MOSCOW,USSR
GIREDMET,MOSCOW,USSR
DRUZHININA, LV
[J].
IEEE JOURNAL OF QUANTUM ELECTRONICS,
1987,
23
(06)
: 1089
-
1094
[9]
GA1-XALXSB AVALANCHE PHOTO-DIODES - RESONANT IMPACT IONIZATION WITH VERY HIGH RATIO OF IONIZATION COEFFICIENTS
HILDEBRAND, O
论文数:
0
引用数:
0
h-index:
0
HILDEBRAND, O
KUEBART, W
论文数:
0
引用数:
0
h-index:
0
KUEBART, W
BENZ, KW
论文数:
0
引用数:
0
h-index:
0
BENZ, KW
PILKUHN, MH
论文数:
0
引用数:
0
h-index:
0
PILKUHN, MH
[J].
IEEE JOURNAL OF QUANTUM ELECTRONICS,
1981,
17
(02)
: 284
-
288
[10]
3-LEVEL OSCILLATOR - A NEW FORM OF TRANSFERRED-ELECTRON DEVICE
HILSUM, C
论文数:
0
引用数:
0
h-index:
0
HILSUM, C
REES, HD
论文数:
0
引用数:
0
h-index:
0
REES, HD
[J].
ELECTRONICS LETTERS,
1970,
6
(09)
: 277
-
&
←
1
2
→