PHOTOLUMINESCENCE STUDY OF GALLIUM ANTIMONIDE GROWN BY LIQUID-PHASE EPITAXY

[11] THE GAALASSB QUATERNARY AND GAALSB TERNARY ALLOYS AND THEIR APPLICATION TO INFRARED DETECTORS [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (02) : 275 - 283

[12] A PHOTOLUMINESCENCE AND HALL-EFFECT STUDY OF GASB GROWN BY MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF APPLIED PHYSICS, 1986, 59 (08) : 2895 - 2900

[13] ELECTRICAL AND OPTICAL STUDIES IN GALLIUM ANTIMONIDE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (06) : 1085 - 1094

[14] SPECTROSCOPIC STUDIES OF SHALLOW DEFECTS IN MBE GASB [J]. JOURNAL OF CRYSTAL GROWTH, 1987, 81 (1-4) : 298 - 303

[15] IS THE INTRINSIC CONDUCTIVITY OF ALGASB GROWN AT LOW-TEMPERATURES NORMAL OR PARA TYPE [J]. APPLIED PHYSICS LETTERS, 1984, 45 (06) : 656 - 658

[16] THEORETICAL-STUDY OF LONG-WAVELENGTH LASER OPERATION IN GA1-XALXASYSB1-Y [J]. JOURNAL OF APPLIED PHYSICS, 1984, 56 (09) : 2502 - 2506

[17] WOELK C, 1974, J CRYST GROWTH, V27, P177, DOI 10.1016/S0022-0248(74)80062-X

[11] THE GAALASSB QUATERNARY AND GAALSB TERNARY ALLOYS AND THEIR APPLICATION TO INFRARED DETECTORS [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (02) : 275 - 283

[12] A PHOTOLUMINESCENCE AND HALL-EFFECT STUDY OF GASB GROWN BY MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF APPLIED PHYSICS, 1986, 59 (08) : 2895 - 2900

[13] ELECTRICAL AND OPTICAL STUDIES IN GALLIUM ANTIMONIDE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (06) : 1085 - 1094

[14] SPECTROSCOPIC STUDIES OF SHALLOW DEFECTS IN MBE GASB [J]. JOURNAL OF CRYSTAL GROWTH, 1987, 81 (1-4) : 298 - 303

[15] IS THE INTRINSIC CONDUCTIVITY OF ALGASB GROWN AT LOW-TEMPERATURES NORMAL OR PARA TYPE [J]. APPLIED PHYSICS LETTERS, 1984, 45 (06) : 656 - 658

[16] THEORETICAL-STUDY OF LONG-WAVELENGTH LASER OPERATION IN GA1-XALXASYSB1-Y [J]. JOURNAL OF APPLIED PHYSICS, 1984, 56 (09) : 2502 - 2506

[17] WOELK C, 1974, J CRYST GROWTH, V27, P177, DOI 10.1016/S0022-0248(74)80062-X