IS THE INTRINSIC CONDUCTIVITY OF ALGASB GROWN AT LOW-TEMPERATURES NORMAL OR PARA TYPE

被引：25

作者：

TAKEDA, Y

NODA, S

SASAKI, A

机构：

来源：

APPLIED PHYSICS LETTERS | 1984年 / 45卷 / 06期

关键词：

D O I：

10.1063/1.95346

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：656 / 658

页数：3

共 8 条

[1] THE LIQUID-PHASE EPITAXIAL-GROWTH OF LOW NET DONOR CONCENTRATION (5X1014-5X1015-CM3) GASB FOR DETECTOR APPLICATIONS IN THE 1.3-1.6 MU-M REGION [J].

CAPASSO, F ;

PANISH, MB ;

SUMSKI, S .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (02) :273-274

[2] LOW-TEMPERATURE GROWTH-CONDITIONS AND PROPERTIES OF ALGA(AS)SB ON GASB SUBSTRATE BY LPE [J].

FUJITA, S ;

HAMAGUCHI, N ;

TAKEDA, Y ;

SASAKI, A .

JOURNAL DE PHYSIQUE, 1982, 43 (NC-5) :29-38

[3] NEW ANODIC NATIVE OXIDE OF GAAS WITH IMPROVED DIELECTRIC AND INTERFACE PROPERTIES [J].

HASEGAWA, H ;

FORWARD, KE ;

HARTNAGEL, HL .

APPLIED PHYSICS LETTERS, 1975, 26 (10) :567-569

[4] GA1-XALXSB AVALANCHE PHOTO-DIODES - RESONANT IMPACT IONIZATION WITH VERY HIGH RATIO OF IONIZATION COEFFICIENTS [J].

HILDEBRAND, O ;

KUEBART, W ;

BENZ, KW ;

PILKUHN, MH .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (02) :284-288

[5] UNDOPED N-TYPE GASB GROWN BY LIQUID-PHASE EPITAXY [J].

MIKI, H ;

SEGAWA, K ;

FUJIBAYASHI, K .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1974, 13 (01) :203-204

[6]

SASAKI A, 1982, INST PHYS CONF SER, P83

[7]

SZE SM, 1981, PHYSICS SEMICONDUCTO, pCH7

[8]

WADA T, 1982, 29TH SPRING M JAP SO

← 1 →