LOW-TEMPERATURE GROWTH-CONDITIONS AND PROPERTIES OF ALGA(AS)SB ON GASB SUBSTRATE BY LPE

被引：4

作者：

FUJITA, S

HAMAGUCHI, N

TAKEDA, Y

SASAKI, A

机构：

来源：

JOURNAL DE PHYSIQUE | 1982年 / 43卷 / NC-5期

关键词：

D O I：

10.1051/jphyscol:1982505

中图分类号：

学科分类号：

摘要：

引用

页码：29 / 38

页数：10

共 32 条

[1] PHOTO-LUMINESCENCE STUDIES ON ALXGA1-XSB ALLOYS [J].

ALLEGRE, J ;

AVEROUS, M ;

JOULLIE, A .

JOURNAL OF LUMINESCENCE, 1978, 17 (03) :301-310

[2] GROWTH AND CHARACTERIZATION OF ALXGA1-XSB [J].

BEDAIR, SM .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (08) :1150-1152

[3] COMPOSITION DEPENDENCE OF ALXGA1-XSB ENERGY GAPS [J].

BEDAIR, SM .

JOURNAL OF APPLIED PHYSICS, 1976, 47 (09) :4145-4147

[4] BOUND-EXCITON FREE-EXCITON BAND-ACCEPTOR DONOR-ACCEPTOR AND AUGER RECOMBINATION IN GAAS [J].

BOGARDUS, EH ;

BEBB, HB .

PHYSICAL REVIEW, 1968, 176 (03) :993-&

[5] VERY HIGH QUANTUM EFFICIENCY GASB MESA PHOTODETECTORS BETWEEN 1.3 AND 1.6-MU-M [J].

CAPASSO, F ;

PANISH, MB ;

SUMSKI, S ;

FOY, PW .

APPLIED PHYSICS LETTERS, 1980, 36 (02) :165-167

[6]

CAPASSO F, 1980, I PHYS C SER, V56, P125

[7]

CAPASSO F, 1982, 24TH ANN EL MAT C TE

[8]

CASEY HC, 1978, HETEROSTRUCTURE LA B, P37

[9] AL-GA-SB TERNARY PHASE-DIAGRAM AND ITS APPLICATION TO LIQUID-PHASE EPITAXIAL-GROWTH [J].

CHENG, KY ;

PEARSON, GL .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (05) :753-757

[10] LOW DARK CURRENT GAALASSB PHOTO-DIODES [J].

CHIN, R ;

HILL, CM .

APPLIED PHYSICS LETTERS, 1982, 40 (04) :332-333

← 1 2 3 4 →