CHARACTERIZATION AND GROWTH OF AL0.065GA0.935SB BY LIQUID-PHASE EPITAXY

被引：16

作者：

CHEN, SC

SU, YK

JUANG, FS

机构：

[1] Natl Cheng Kung Univ, Taiwan

来源：

JOURNAL OF CRYSTAL GROWTH | 1988年 / 92卷 / 1-2期

关键词：

Crystals--Epitaxial Growth - Substrates - Surfaces;

D O I：

10.1016/0022-0248(88)90441-1

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Al0.065Ga0.935Sb ternary compound layers have been grown on GaSb substrates by liquid phase epitaxy using the supercooling technique. The optimum growth condition was determined to be a supercooling temperature of ΔT=7°C for a cooling rate of 0.4°C/min. The solid composition of an AlxGa1-xSb ternary layer was obtained by EDS and EPMA to be x=0.065. The band gap energy was 882 meV at 14 K and the temperature coefficient was -2.86×10-4 eV/K.

引用

页码：118 / 122

页数：5

共 16 条

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[2]

CASEY HC, 1978, HETEROSTRUCTURE LA B

[3]

CHENG KY, 1976, B AM PHYS SOC, V21, P365

[4]

CHENG KY, 1975, J ELECTROCHEM SOC, V124, P753