PASSIVATION OF COPPER BY LITHIUM IN P-TYPE GAAS

被引:8
作者
EGILSSON, T
GISLASON, HP
YANG, BH
机构
[1] CHINESE ACAD SCI, SEMICOND MAT SCI LAB, BEIJING, PEOPLES R CHINA
[2] CHINESE ACAD SCI, INST SEMICOND, BEIJING, PEOPLES R CHINA
来源
PHYSICAL REVIEW B | 1994年 / 50卷 / 03期
关键词
D O I
10.1103/PhysRevB.50.1996
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We report the passivation of two deep copper-related acceptor levels in Cu-diffused p-type GaAs by the group-I element lithium. The deep-level-transient-spectroscopy (DLTS) signals of the well-known Cu-related levels with apparent activation energies 0.15 eV and 0.40 eV disappear in Cu-diffused samples when they are diffused with Li, but can be reactivated by annealing. Photoluminescence measurements show a corresponding disappearance and reappearance of the copper-related luminescence at 1.36 eV. Also we observe with DLT'S an energy level at E(V) + 0.32 eV in the Cu-Li-diff-used samples. The level is neither present in the Cu-diffused samples before Li diffusion nor in Cu-Li-diffused samples after annealing. As the level is not observed in starting materials or solely Li-diffused samples we suggest that it is related to a Cu-Li complex.
引用
收藏
页码:1996 / 1998
页数:3
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