INTERACTION OF HYDROGEN AND DEUTERIUM WITH COPPER IN GAAS

被引：16

作者：

HOFMANN, G

MADOK, J

HAEGEL, NM

ROOS, G

JOHNSON, NM

HALLER, EE

机构：

[1] UNIV CALIF LOS ANGELES,DEPT MAT SCI & ENGN,LOS ANGELES,CA 90024

[2] XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304

[3] UNIV CALIF BERKELEY,DEPT MAT SCI & MINERAL ENGN,BERKELEY,CA 94720

来源：

APPLIED PHYSICS LETTERS | 1992年 / 61卷 / 24期

关键词：

D O I：

10.1063/1.108020

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have investigated hydrogen and deuterium passivation of two copper-related deep levels at E(V)+0.13 eV and E(V)+0.40 eV in GaAs with deep level transient spectroscopy (DLTS). The DLTS signals of the two copper-related acceptor levels disappear after exposing the samples to a remote hydrogen or deuterium plasma at 300-degrees-C for 1/2 h. Both copper-related levels can be reactivated by thermal annealing. The copper-related donor-accepter pair luminescence at 1.36 eV is correlated with the DLTS signal of the copper-related acceptor level at E(V)+0.13 eV.

引用

页码：2914 / 2916

页数：3

共 12 条

[1] DOUBLE ACCEPTOR BEHAVIOR OF CU IN TE-DOPED GAAS [J].