COPPER-RELATED DEEP LEVEL DEFECTS IN III-V-SEMICONDUCTORS

被引：59

作者：

KULLENDORFF, N ^{[1
]}

JANSSON, L ^{[1
]}

LEDEBO, LA ^{[1
]}

机构：

[1] INNOVANCE AB,S-22350 LUND,SWEDEN

来源：

JOURNAL OF APPLIED PHYSICS | 1983年 / 54卷 / 06期

关键词：

D O I：

10.1063/1.332481

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3203 / 3212

页数：10

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