TYPE-2 LOCALIZED INTERFACE STATES AND SI SURFACE PREPARATION FOR NI, PT, AL-SI SCHOTTKY DIODES

被引：7

作者：

MURET, P

DENEUVILLE, A

机构：

来源：

APPLIED PHYSICS LETTERS | 1978年 / 32卷 / 04期

关键词：

D O I：

10.1063/1.90011

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：256 / 258

页数：3

共 18 条

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