HIGH-SPEED RESPONSE OF A GAAS METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR TO ELECTRON-BEAM EXCITATION

被引：10

作者：

FLESNER, LD

DAVIS, NM

WIEDER, HH

机构：

来源：

关键词：

D O I：

10.1063/1.331087

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3873 / 3877

页数：5

共 13 条

[1]

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[4]

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[5]

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[6] HIGH-GAIN OPTICAL-DETECTION WITH GAAS FIELD-EFFECT TRANSISTORS [J].

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[7]

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[9]

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[10]

SUGETA T, 1980, JPN J APPL PHYS, V19, pL275