ELECTRICAL CHARACTERIZATION OF INSTABILITIES IN 6H SILICON-CARBIDE METAL-OXIDE-SEMICONDUCTOR CAPACITORS

被引：27

作者：

RAYNAUD, C ^{[1
]}

AUTRAN, JL ^{[1
]}

BALLAND, B ^{[1
]}

GUILLOT, G ^{[1
]}

JAUSSAUD, C ^{[1
]}

BILLON, T ^{[1
]}

机构：

[1] CENG,CEA TECHNOL AVANCEES,DMEL,LETI,F-38041 GRENOBLE,FRANCE

来源：

JOURNAL OF APPLIED PHYSICS | 1994年 / 76卷 / 02期

关键词：

D O I：

10.1063/1.357784

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Capacitance, charge, and current measurements have been performed on p-type 6H-SiC metal-oxide-semiconductor capacitors in order to study electrical instabilities in the SiO2/6H-SiC system and the behavior of the inversion layer at different temperatures. The analysis of hysteresis and deformation of capacitance-voltage curves shows the presence of interface states and oxide traps with a density of approximately 5-7 X 10(10) eV-1 cm-2 in the midgap and a peak of 3 X 10(12) eV-1 cm-2 at E = E(v) + 0.53 eV. Ionic contamination of the oxide layer has also been investigated, by thermally stimulated ionic current: A mobile charge concentration in the range of 10(12) cm-2 was found. Finally, it is shown, by charge-voltage measurements, that the minority-carrier generation is assisted by deep levels during the formation of the inversion layer.

引用

页码：993 / 997

页数：5

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