A NOVEL DEPOSITION CONCEPT FOR AMORPHOUS SUPERLATTICES

被引：15

作者：

KAWASAKI, M

MATSUZAKI, Y

FUEKI, K

NAKAJIMA, K

YOSHIDA, Y

KOINUMA, H

机构：

[1] TOKYO INST TECHNOL,ENGN MAT RES LAB,MIDORI KU,YOKOHAMA,KANAGAWA 227,JAPAN

[2] UNIV TOKYO,FAC ENGN,DEPT IND CHEM,BUNKYO KU,TOKYO 112,JAPAN

[3] TOKYO UNIV,FAC ENGN,DEPT APPL CHEM,KAWAGOE,SAITAMA 350,JAPAN

来源：

NATURE | 1988年 / 331卷 / 6152期

关键词：

D O I：

10.1038/331153a0

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

引用

页码：153 / 155

页数：3

共 7 条

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OSAKA, Y .

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[4] LIFETIME OF DOMINANT RADICALS FOR THE DEPOSITION OF A-SI-H FROM SIH4 AND SI2H6 GLOW-DISCHARGES [J].

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[5] PHOTOCHEMISTRY OF SILICON-COMPOUNDS .4. MERCURY PHOTOSENSITIZATION OF DISILANE [J].

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[6] BANDGAP AND RESISTIVITY OF AMORPHOUS-SEMICONDUCTOR SUPERLATTICES [J].

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JOURNAL OF NON-CRYSTALLINE SOLIDS, 1984, 66 (1-2) :345-350

[7]

VINZANT JW, 1979, PLASMAS POLYM, P79

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