TEMPERATURE-DEPENDENCE OF ELECTRICAL-PROPERTIES IN BEIMPLANTED SEMI-INSULATING GAAS

被引：12

作者：

HUTCHBY, JA ^{[1
]}

VAIDYANATHAN, KV ^{[1
]}

机构：

[1] NASA,LANGLEY RES CTR,HAMPTON,VA 23665

来源：

关键词：

D O I：

10.1063/1.323973

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2559 / 2564

页数：6

共 31 条

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[7] PHOTOLUMINESCENCE FROM BE-IMPLANTED GAAS
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MCLEVIGE, WV
STREETMAN, BG
[J]. APPLIED PHYSICS LETTERS, 1975, 27 (10) : 567 - 569
[8] TEMPERATURE-DEPENDENCE OF PHOTOLUMINESCENCE FROM BE-IMPLANTED GAAS
CHATTERJEE, PK
MCLEVIGE, WV
VAIDYANATHAN, KV
STREETMAN, BG
[J]. APPLIED PHYSICS LETTERS, 1976, 28 (09) : 509 - 512
[9] CHATTERJEE PK, ION IMPLANTATION SEM
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