ROLE OF A POLYSILICON LAYER IN THE REDUCTION OF LATTICE-DEFECTS ASSOCIATED WITH PHOSPHORUS PREDEPOSITION IN SILICON

被引：5

作者：

ARMIGLIATO, A

SERVIDORI, M

SOLMI, S

ZANI, A

机构：

来源：

JOURNAL OF MATERIALS SCIENCE | 1980年 / 15卷 / 05期

关键词：

D O I：

10.1007/BF00551800

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：1124 / 1130

页数：7

共 17 条

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[9] STUDIES OF PUSH-OUT EFFECT IN SILICON .1. COMPARISON OF SEQUENTIAL BORON-PHOSPHORUS AND GALLIUM-PHOSPHORUS DIFFUSIONS [J].

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