STUDIES OF PUSH-OUT EFFECT IN SILICON .1. COMPARISON OF SEQUENTIAL BORON-PHOSPHORUS AND GALLIUM-PHOSPHORUS DIFFUSIONS

被引:9
作者
JONES, CL [1 ]
WILLOUGHBY, AFW [1 ]
机构
[1] UNIV SOUTHAMPTON,ENGN MAT LABS,SOUTHAMPTON S09 5NH,ENGLAND
关键词
D O I
10.1149/1.2134057
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
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页码:1531 / 1538
页数:8
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共 23 条
[1]   ALTERNATIVE RELATIONSHIP FOR CONVERTING INCREMENTAL SHEET RESISTIVITY MEASUREMENTS INTO PROFILES OF IMPURITY CONCENTRATION [J].
EVANS, RA ;
DONOVAN, RP .
SOLID-STATE ELECTRONICS, 1967, 10 (02) :155-&
[2]   SURFACE PROTECTION AND SELECTIVE MASKING DURING DIFFUSION IN SILICON [J].
FROSCH, CJ ;
DERICK, L .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1957, 104 (09) :547-552
[3]   LOCALIZED ENHANCED DIFFUSION IN NPN SILICON STRUCTURES [J].
GERETH, R ;
VANLOON, PGG ;
WILLIAMS, V .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (03) :323-+
[4]   REDISTRIBUTION OF ACCEPTOR + DONOR IMPURITIES DURING THERMAL OXIDATION OF SILICON [J].
GROVE, AS ;
SAH, CT ;
LEISTIKO, O .
JOURNAL OF APPLIED PHYSICS, 1964, 35 (09) :2695-&
[5]   INTERACTIONS IN SEQUENTIAL DIFFUSION PROCESSES IN SEMICONDUCTORS [J].
HU, SM ;
SCHMIDT, S .
JOURNAL OF APPLIED PHYSICS, 1968, 39 (09) :4272-+
[6]   APPROXIMATE THEORY OF EMITTER-PUSH EFFECT [J].
HU, SM ;
YEH, TH .
JOURNAL OF APPLIED PHYSICS, 1969, 40 (11) :4615-&
[7]  
HU SM, 1973, ATOMIC DIFFUSION SEM
[8]   RESISTIVITY OF BULK SILICON AND OF DIFFUSED LAYERS IN SILICON [J].
IRVIN, JC .
BELL SYSTEM TECHNICAL JOURNAL, 1962, 41 (02) :387-+
[9]   COMPLETE BASE PROFILE SHAPE IN A PUSHED-OUT DIFFUSED TRANSISTOR ANALYZED BY RADIOTRACER METHODS [J].
JONES, CL ;
WILLOUGHBY, AF .
APPLIED PHYSICS LETTERS, 1974, 25 (02) :114-116
[10]  
KENDALL DL, 1969, SEMICONDUCTORS SILIC