CHARACTERIZATION OF MICROPLASMA SITES IN SILICON N+-P JUNCTIONS

被引：10

作者：

DONOLATO, C ^{[1
]}

MERLI, PG ^{[1
]}

VECCHI, I ^{[1
]}

机构：

[1] CNR, LAMEL, I-40126 BOLOGNA, ITALY

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1977年 / 124卷 / 03期

关键词：

D O I：

10.1149/1.2133330

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：473 / 474

页数：2

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[9] ELECTRON-MICROSCOPY OF SILICON MONOPHOSPHIDE PRECIPITATES IN P-DIFFUSED SILICON [J].

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[10] OXIDATION-INDUCED STACKING-FAULTS IN SILICON .2. ELECTRICAL EFFECTS IN PN DIODES [J].

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