TITANIUM ISOPROPOXIDE AS A PRECURSOR IN ATOMIC LAYER EPITAXY OF TITANIUM-DIOXIDE THIN-FILMS

被引:268
作者
RITALA, M
LESKELA, M
NIINISTO, L
HAUSSALO, P
机构
[1] HELSINKI UNIV TECHNOL,INORGAN & ANALYT CHEM LAB,SF-02150 ESPOO,FINLAND
[2] UNIV HELSINKI,ACCELERATOR LAB,SF-00014 HELSINKI,FINLAND
关键词
D O I
10.1021/cm00032a023
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Atomic layer epitaxy (ALE) deposition of titanium dioxide thin films using titanium isopropoxide and water as precursors was studied. The deposition temperature was limited to below 350-degrees-C by the thermal decomposition of the alkoxide. Films were studied by means of spectrophotometry, XRD, RBS, NRA, SEM, and AFM. A comparison with the ALE process using titanium tetrachloride as a titanium precursor is being carried out.
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页码:1174 / 1181
页数:8
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