共 11 条
[1]
Bischoff F., 1954, Patents, Patent No. 1140549
[2]
Bischoff F., 1954, Patents, Patent No. 1102117
[3]
CZOCHRALSKI J, 1917, Z PHYS CHEM-STOCH VE, V92, P219
[4]
DIETL J, 1981, CRYSTALS GROWTH PROP, V5, P43
[5]
GUTSCHE H, 1962, Patent No. 3042494
[6]
SIRTL E, 1967, FESTKORPERPROBLEME, V6, P1
[7]
LATTICE-DISTORTIONS INDUCED BY CARBON IN SILICON
[J].
PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES,
1988, 58 (02)
:435-443
[8]
SILICON LATTICE-PARAMETERS AS AN ABSOLUTE SCALE OF LENGTH FOR HIGH-PRECISION MEASUREMENTS OF FUNDAMENTAL CONSTANTS
[J].
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH,
1990, 118 (02)
:379-388
[9]
STATUS AND FUTURE OF SILICON CRYSTAL-GROWTH
[J].
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY,
1989, 4 (1-4)
:1-10
[10]
Zulehner W., 1982, CRYSTALS GROWTH PROP, P1