SILICON LATTICE-PARAMETERS AS AN ABSOLUTE SCALE OF LENGTH FOR HIGH-PRECISION MEASUREMENTS OF FUNDAMENTAL CONSTANTS

被引：103

作者：

WINDISCH, D

BECKER, P

机构：

[1] Physikalisch-Technische Bundesanstalt, Braunschweig

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1990年 / 118卷 / 02期

关键词：

D O I：

10.1002/pssa.2211180205

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Precise lattice spacing measurements are carried out with an X‐ray double‐source, double‐crystal transmission technique in order to investigate the lattice distortions in silicon crystals containing oxygen impurities. A linear correlation between the absolute value of the lattice spacing and the oxygen concentration is observed. If, in float‐zoned silicon, the change in the lattice parameter due to oxygen and carbon content is taken into account, then the same lattice parameter is obtained for different silicon crystals to within a few parts in 10−8. Highly pure silicon is therefore an excellent standard for length measurements in the subnanometer region which is important, for example, in the precise determination of fundamental constants. Copyright © 1990 WILEY‐VCH Verlag GmbH & Co. KGaA

引用

页码：379 / 388

页数：10

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