EVALUATION OF SILICON DOPED CFCS FOR PLASMA-FACING MATERIAL

被引：20

作者：

WU, CH

ALESSANDRINI, C

MOORMANN, R

RUBEL, M

SCHERZER, BMU

机构：

[1] EURATOM, ENEA FUS, CRE FRASCATI, I-00044 FRASCATI, ITALY

[2] FORSCHUNGSZENTRUM JULICH, ISR, D-52425 JULICH, GERMANY

[3] UNIV STOCKHOLM, MANNE SIEGBAHN LAB, S-10405 STOCKHOLM, SWEDEN

[4] MAX PLANCK INST PLASMA PHYS, D-85748 GARCHING, GERMANY

来源：

JOURNAL OF NUCLEAR MATERIALS | 1995年 / 220卷

关键词：

D O I：

10.1016/0022-3115(94)00598-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

To improve the CFCs characteristics of chemical erosion, tritium retention, and H2O/air resistivity, silicon doped CFCs were developed in the framework of European Fusion Technology programme. The tritium retention, H2O reaction kinetics, outgassing behaviour and depletion of silicon in doped CFCs were investigated as a function of silicon concentration and temperature. The results show that silicon in bulk of CFCs decreases the tritium bulk retention and the H2O reactivity. However, it has been observed that the concentration of silicon is slightly decreased at elevated temperature. This paper presents the experimental results and the consequence is discussed.

引用

页码：860 / 864

页数：5

共 10 条

[1]

ALESSANDRINI C, 1994, PB65

[2]

BONAL JP, 1994, COMMUNICATION

[3]

KWAST H, 1991, COMMUNICATION

[4]

MMOORMANN R, 1994, J NUCL MATER, V212, P1178