OBSERVATION OF THRESHOLD OXIDE ELECTRIC-FIELD FOR TRAP GENERATION IN OXIDE-FILMS ON SILICON

被引：21

作者：

HSU, CCH ^{[1
]}

NISHIDA, T ^{[1
]}

SAH, CT ^{[1
]}

机构：

[1] UNIV ILLINOIS,ILLINOIS SOLID STATE ELECTR LAB,URBANA,IL 61801

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 63卷 / 12期

关键词：

D O I：

10.1063/1.340281

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5882 / 5884

页数：3

共 14 条

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[10] STUDY OF THE ATOMIC MODELS OF 3 DONOR-LIKE TRAPS ON OXIDIZED SILICON WITH ALUMINUM GATE FROM THEIR PROCESSING DEPENDENCES [J].

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