NORMAL INCIDENCE INTERSUBBAND ABSORPTION IN VERTICAL QUANTUM-WELLS

被引：16

作者：

BERGER, V

VERMEIRE, G

DEMEESTER, P

WEISBUCH, C

机构：

[1] STATE UNIV GHENT, IMEC, DEPT INFORMAT TECHNOL, B-9000 GHENT, BELGIUM

[2] ECOLE POLYTECH, PHYS MAT CONDENSEE LAB, F-91128 PALAISEAU, FRANCE

来源：

APPLIED PHYSICS LETTERS | 1995年 / 66卷 / 02期

关键词：

D O I：

10.1063/1.113139

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

N-doped vertical AlGaAs quantum wells have been fabricated by metalorganic vapor phase epitaxial growth of a single-doped AlGaAs layer on a submicron grating. Intersubband absorption at normal incidence is demonstrated in those quantum wells. This opens new possibilities for infrared quantum well devices using intersubband transitions. © 1995 American Institute of Physics.

引用

页码：218 / 220

页数：3

共 17 条

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