Observation of a bistable defect generated and activated by heat treatments in irradiated high resistivity silicon detectors

被引：17

作者：

Moll, M

Feick, H

Fretwurst, E

Lindstrom, G

Schulz, T

机构：

[1] I. Institut für Experimental Physik, Universität Hamburg

来源：

NUCLEAR PHYSICS B | 1995年

关键词：

D O I：

10.1016/S0920-5632(95)80072-7

中图分类号：

O412 [相对论、场论]; O572.2 [粒子物理学];

学科分类号：

摘要：

Systematic investigations of transient effects in the depletion voltage of radiation damaged silicon detectors after heat treatments have been performed. Experimental results on the change of the depletion voltage induced by forward bias, illumination or further heat treatments are presented. The observed change as function of time and temperature is discussed in terms of the generation, activation and annihilation of a bistable defect.

引用

页码：468 / 474

页数：7

共 12 条

[1] BATES S, 1994, NIM A, V344, P28
[2] NEUTRON YIELDS FROM THICK BE TARGETS BOMBARDED WITH DEUTERONS OR PROTONS
BREDE, HJ
DIETZE, G
KUDO, K
SCHREWE, UJ
TANCU, F
WEN, C
[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1989, 274 (1-2) : 332 - 344
[3] RADIATION HARDNESS OF SILICON DETECTORS FOR FUTURE COLLIDERS
FRETWURST, E
CLAUSSEN, N
CROITORU, N
LINDSTROM, G
PAPENDICK, B
PEIN, U
SCHATZ, H
SCHULZ, T
WUNSTORF, R
[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1993, 326 (1-2) : 357 - 364
[4] RADIATION EFFECTS OF DOUBLE-SIDED SILICON STRIP SENSORS
TAMURA, N
HATAKENAKA, T
IWATA, Y
KUBOTA, M
OHSUGI, T
OKADA, M
UNNO, Y
ASO, T
ISHIZUKA, M
MIYATA, H
ANDO, A
HATANAKA, K
MIZUNO, Y
GOTO, M
KOBAYASHI, S
MURAKAMI, A
INOUE, K
SUZUKI, Y
DAIGO, M
YAMAMOTO, K
YAMAMURA, K
[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1994, 342 (01) : 131 - 136
[5] FRETWURST E, 1990, NIM A, V274, P1
[6] ELECTRONICALLY CONTROLLED REACTIONS OF INTERSTITIAL IRON IN SILICON
KIMERLING, LC
BENTON, JL
[J]. PHYSICA B & C, 1983, 116 (1-3): : 297 - 300
[7] NEUTRON, PROTON, AND GAMMA-IRRADIATIONS OF SILICON DETECTORS
LEMEILLEUR, F
GLASER, M
HEIJNE, EHM
JARRON, P
SOAVE, C
LEROY, C
RIOUX, J
TRIGGER, I
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1994, 41 (03) : 425 - 431
[8] SCHMIDT R, 1978, THESIS U HAMBURG
[9] LONG-TERM REVERSE ANNEALING IN SILICON DETECTORS
SCHULZ, T
FEICK, H
FRETWURST, E
LINDSTROM, G
MOLL, M
MAHLMANN, KH
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1994, 41 (04) : 791 - 795
[10] WUNSTORF R, 1992, DESY FH1K9201

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