SURFACE-STRUCTURE CHANGES BY LASER-PULSES IN SILICON

被引：28

作者：

VITALI, G

BERTOLOTTI, M

FOTI, G

RIMINI, E

机构：

[1] UNIV ROME,FAC INGN,IST FIS,I-00100 ROME,ITALY

[2] UNIV CATANIA,IST STRUTTURA MAT,I-95125 CATANIA,ITALY

来源：

关键词：

D O I：

10.1016/0375-9601(77)90927-6

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：351 / 354

页数：4

共 8 条

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BEDAIR, SM ;

SMITH, HP .

[2] ACTIVATION-ENERGY FOR MIGRATION ON SILICON (111) FACE [J].

BEDAIR, SM .

[3]

FOTI G, TO BE PUBLISHED

[4]

KACHURIN GA, 1976, SOV PHYS SEMICOND, V9, P946

[5]

PRONKO P, 1977, 1976 P INT C ION IMP

[6]

SHTYRKOV EI, 1975, SOV PHYS SEMICOND+, V9, P1309

[7]

VITALI G, 1977, 7TH INT C AM LIQ SEM

[8]

VITALI G, 1975, REV SCI INSTRUM, V47, P542