DEFECT STRUCTURE AND RECOVERY IN HYDROGEN-IMPLANTED SEMI-INSULATING GAAS

被引：45

作者：

SAARINEN, K ^{[1
]}

HAUTOJARVI, P ^{[1
]}

KEINONEN, J ^{[1
]}

RAUHALA, E ^{[1
]}

RAISANEN, J ^{[1
]}

CORBEL, C ^{[1
]}

机构：

[1] UNIV HELSINKI,ACCELERATOR LAB,SF-00550 HELSINKI,FINLAND

来源：

PHYSICAL REVIEW B | 1991年 / 43卷 / 05期

关键词：

D O I：

10.1103/PhysRevB.43.4249

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A beam of low-energy positrons together with ion-beam techniques have been used to profile defect and hydrogen distributions and their annealing behavior after the room-temperature implantation of 3 x 10(15) to 1 x 10(17) 60-keV H+ cm-2 in semi-insulating GaAs. A monovacancy overlayer is observed close to the surface at 0-330 nm after 1 x 10(17) H+ cm-2 implantation. The vacancies in the stopping range of the implanted H at 330-720 nm are seen only after the annealing at 200-degrees-C, probably due to a release of hydrogen from the vacancies. The total vacancy depth of 720 nm correlates well with the distribution of displaced atoms and with the energy deposited in the H implantation. Above 350-degrees-C, the monovacancies in the region of 0-350 nm start to disappear, whereas at the depth of 350-750 nm stable vacancy-hydrogen agglomerates are formed at 400-degrees-C. The redistribution of the implanted hydrogen at 0-350 nm was observed to be connected with the migration of complexes containing implantation-induced defects.

引用

页码：4249 / 4262

页数：14

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