HYDROGEN CHEMICAL-POTENTIAL AND STRUCTURE OF A-SI-H

被引：114

作者：

STREET, RA

机构：

[1] Xerox Palo Alto Research Center, Palo Alto

来源：

PHYSICAL REVIEW B | 1991年 / 43卷 / 03期

关键词：

D O I：

10.1103/PhysRevB.43.2454

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

It is proposed that the chemical equilibrium of hydrogen is an important factor in determining the structure of thin films deposited from silane-hydrogen plasmas. Hydrogen interacts with the silicon network to optimize the local bonding configurations. Raising the effective hydrogen chemical potential reduces the disorder of hydrogenated amorphous silicon films and eventually induces a transition to crystallinity.

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页码：2454 / 2457

页数：4

相关论文

共 17 条

[1] HYDROGENATED MICROVOIDS AND LIGHT-INDUCED DEGRADATION OF AMORPHOUS-SILICON SOLAR-CELLS [J].

CARLSON, DE .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1986, 41 (04) :305-309

[2] GAS AND SURFACE PROCESSES LEADING TO HYDROGENATED AMORPHOUS-SILICON FILMS [J].

GALLACHER, A ;

SCOTT, J .

SOLAR CELLS, 1987, 21 :147-152

[3] INTERSTITIAL HYDROGEN AND NEUTRALIZATION OF SHALLOW-DONOR IMPURITIES IN SINGLE-CRYSTAL SILICON [J].

JOHNSON, NM ;

HERRING, C ;

CHADI, DJ .

PHYSICAL REVIEW LETTERS, 1986, 56 (07) :769-772

[4] FORMATION KINETICS AND CONTROL OF MICROCRYSTALLITE IN MU-C-SI-H FROM GLOW-DISCHARGE PLASMA [J].

MATSUDA, A .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1983, 59-6 (DEC) :767-774

[5] ELECTRONS IN DISORDERED STRUCTURES [J].

MOTT, NF .

ADVANCES IN PHYSICS, 1967, 16 (61) :49-+

[6] HYDROGEN ABSTRACTION FROM HYDROGENATED AMORPHOUS-SILICON SURFACE BY HYDROGEN-ATOMS [J].

MURAMATSU, Y ;

YABUMOTO, N .

APPLIED PHYSICS LETTERS, 1986, 49 (19) :1230-1232

[7] BAND TAILS, ENTROPY, AND EQUILIBRIUM DEFECTS IN HYDROGENATED AMORPHOUS-SILICON [J].

SMITH, ZE ;

WAGNER, S .

PHYSICAL REVIEW LETTERS, 1987, 59 (06) :688-691

[8] THE INFLUENCE OF GROWTH-CONDITIONS ON THE EQUILIBRIUM STATES IN A-SI-H [J].

STREET, RA ;

WINER, K .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1989, 114 :645-647

[9] DOPING AND THE FERMI ENERGY IN AMORPHOUS-SILICON [J].

STREET, RA .

PHYSICAL REVIEW LETTERS, 1982, 49 (16) :1187-1190

[10] THERMAL-EQUILIBRIUM PROCESSES IN AMORPHOUS-SILICON [J].

STREET, RA ;

KAKALIOS, J ;

TSAI, CC ;

HAYES, TM .

PHYSICAL REVIEW B, 1987, 35 (03) :1316-1333