INFLUENCE OF BUILT-IN STRAIN ON HALL-EFFECT IN INGAAS/GAAS QUANTUM-WELL STRUCTURES WITH P-TYPE MODULATION DOPING

被引：10

作者：

FRITZ, IJ

DOYLE, BL

SCHIRBER, JE

JONES, ED

DAWSON, LR

DRUMMOND, TJ

机构：

来源：

APPLIED PHYSICS LETTERS | 1986年 / 49卷 / 10期

关键词：

D O I：

10.1063/1.97047

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

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页码：581 / 583

页数：3

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