SCHOTTKY TYPE PHOTODIODES AS DETECTORS IN THE VUV AND SOFT-X-RAY RANGE

[1] SCATTERING BY IONIZATION AND PHONON EMISSION IN SEMICONDUCTORS [J]. PHYSICAL REVIEW B, 1980, 22 (12) : 5565 - 5582

[2] BARTH J, 1986, P SOC PHOTOOPT INSTR, V733, P481

[3] BERTOLINI G, 1968, SEMICONDUCTORS DETEC, P133

[4] SILICON PHOTODIODE DETECTOR FOR FLUORESCENCE EXAFS [J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1987, 58 (10) : 1891 - 1894

[5] THE X-RAY-CALIBRATION OF SILICON P-I-N-DIODES BETWEEN 1.5 AND 17.4 KEV [J]. JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS, 1980, 13 (06): : 623 - 626

[6] DAY RH, 1981, LA012791360 LOS AL R

[7] DIETZ E, 1985, 2 M SEYA NAMIOKA MON, P238

[8] DEFECT PRODUCTION IN SIO2 BY X-RAY AND CO-60 RADIATIONS [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1985, 32 (06) : 4363 - 4368

[9] Feldhaus J., 1986, P SOC PHOTO-OPT INS, V0733, P242

[10] SPECTRAL RADIANT POWER MEASUREMENTS OF VUV AND SOFT-X-RAY SOURCES USING THE ELECTRON STORAGE RING BESSY AS A RADIOMETRIC STANDARD SOURCE [J]. APPLIED OPTICS, 1984, 23 (23): : 4252 - 4260

[1] SCATTERING BY IONIZATION AND PHONON EMISSION IN SEMICONDUCTORS [J]. PHYSICAL REVIEW B, 1980, 22 (12) : 5565 - 5582

[2] BARTH J, 1986, P SOC PHOTOOPT INSTR, V733, P481

[3] BERTOLINI G, 1968, SEMICONDUCTORS DETEC, P133

[4] SILICON PHOTODIODE DETECTOR FOR FLUORESCENCE EXAFS [J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1987, 58 (10) : 1891 - 1894

[5] THE X-RAY-CALIBRATION OF SILICON P-I-N-DIODES BETWEEN 1.5 AND 17.4 KEV [J]. JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS, 1980, 13 (06): : 623 - 626

[6] DAY RH, 1981, LA012791360 LOS AL R

[7] DIETZ E, 1985, 2 M SEYA NAMIOKA MON, P238

[8] DEFECT PRODUCTION IN SIO2 BY X-RAY AND CO-60 RADIATIONS [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1985, 32 (06) : 4363 - 4368

[9] Feldhaus J., 1986, P SOC PHOTO-OPT INS, V0733, P242

[10] SPECTRAL RADIANT POWER MEASUREMENTS OF VUV AND SOFT-X-RAY SOURCES USING THE ELECTRON STORAGE RING BESSY AS A RADIOMETRIC STANDARD SOURCE [J]. APPLIED OPTICS, 1984, 23 (23): : 4252 - 4260