A MODEL FOR THE DISCHARGE KINETICS AND PLASMA CHEMISTRY DURING PLASMA ENHANCED CHEMICAL VAPOR-DEPOSITION OF AMORPHOUS-SILICON

被引：467

作者：

KUSHNER, MJ

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 63卷 / 08期

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D O I：

10.1063/1.340989

中图分类号：

O59 [应用物理学];

学科分类号：

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页码：2532 / 2551

页数：20

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