INTERFACE STRUCTURE OF A GAAS-ALAS SUPERLATTICE MBE GROWN ON A GAAS VICINAL SURFACE

被引：10

作者：

POUDOULEC, A

GUENAIS, B

DANTERROCHES, C

REGRENY, A

机构：

[1] Centre National d'Etudes des Télécommunications, F-22301 Lannion Cedex, Route de Trégastel

[2] F-38240 Meylan, Chemin du Vieux Chêne

[3] Centre National d'Etudes des Télécommunications, F-22301 Lannion Cedex, Route de Trégastel

来源：

JOURNAL OF CRYSTAL GROWTH | 1990年 / 100卷 / 03期

关键词：

D O I：

10.1016/0022-0248(90)90254-I

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

A GaAs-AlAs superlattice MBE grown onto a GaAs vicinal surface misoriented by 3° from the (001) plane toward the (111)Ga plane, was investigated using different transmission electron microscopy techniques, such as (002) dark field image, transmission electron diffraction and high resolution electron microscopy together with image simulation. Under high resolution electron microscopy, we describe the interface structure. We evaluate the terrace width distribution showing the different behaviour of top and bottom interfaces. Moreover, some typical step contrast bring informations about the step front structure. © 1990.

引用

页码：529 / 538

页数：10

共 23 条

[1] X-RAY-DIFFRACTION EFFECTS IN GA AND AL ARSENIDE STRUCTURES MBE-GROWN ON SLIGHTLY MISORIENTED GAAS (001) SUBSTRATES [J].