STRUCTURAL FEATURES OF MBE GROWN VERY SHORT-PERIOD GAAS-ALAS SUPERLATTICES

被引：6

作者：

GUENAIS, B

POUDOULEC, A

AUVRAY, P

BAUDET, M

REGRENY, A

LAMBERT, B

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1988年 / 88卷 / 01期

关键词：

D O I：

10.1016/S0022-0248(98)90014-8

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：125 / 134

页数：10

共 19 条

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[8]

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[9] RAMAN-SCATTERING CHARACTERIZATION OF INTERFACE BROADENING IN GAAS/ALAS SHORT-PERIOD SUPERLATTICES GROWN BY MOLECULAR-BEAM EPITAXY [J].

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[10] SOME ASPECTS OF THE X-RAY STRUCTURAL CHARACTERIZATION OF (GA1-XALXAS)N1(GAAS)N2 GAAS(001) SUPERLATTICES [J].

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CAULET, J ;

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EMERY, JY ;

REGRENY, A .

JOURNAL OF APPLIED CRYSTALLOGRAPHY, 1984, 17 (JUN) :196-205

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