LOW-NOISE MILLIMETRE-WAVE MIXER DIODES - RESULTS AND EVALUATION OF A TEST PROGRAM

[1] ABBOTT DA, 1977, I PHYS C SER 33A, P255

[2] INFLUENCE OF LOW-TEMPERATURE THERMOTREATMENT ON CHARACTERISTICS OF CR-GAAS AND AU-CR-GAAS SCHOTTKY DIODES [J]. ELECTRONICS LETTERS, 1978, 14 (22) : 700 - 701

[3] BRODZINSKY A, 1978, NATO S MICROWAVE COM

[4] PERFORMANCE AND RELIABILITY OF AN IMPROVED HIGH-TEMPERATURE GAAS SCHOTTKY JUNCTION AND NATIVE-OXIDE PASSIVATION [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (06) : 698 - 704

[5] Campbell J. S., 1979, Fourth International Conference on Infrared and Millimeter Waves and their Applications, P80

[6] STUDIES OF TUNNEL MOS DIODES .1. INTERFACE EFFECTS IN SILICON SCHOTTKY DIODES [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1971, 4 (10) : 1589 - +

[7] SUB-HARMONICALLY PUMPED MILLIMETER-WAVE MIXERS [J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1978, 26 (10) : 706 - 715

[8] IMPURITY PROFILES OF GAAS EPITAXIAL LAYERS DOPED WITH SN, SI, AND GE GROWN WITH MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (04) : 1733 - 1735

[9] PHYSICAL SIGNIFICANCE OF TO ANOMALIES IN SCHOTTKY BARRIERS [J]. SOLID-STATE ELECTRONICS, 1977, 20 (03) : 171 - 175

[10] ERIKSON NR, 1979, THESIS U CALIFORNIA

[1] ABBOTT DA, 1977, I PHYS C SER 33A, P255

[2] INFLUENCE OF LOW-TEMPERATURE THERMOTREATMENT ON CHARACTERISTICS OF CR-GAAS AND AU-CR-GAAS SCHOTTKY DIODES [J]. ELECTRONICS LETTERS, 1978, 14 (22) : 700 - 701

[3] BRODZINSKY A, 1978, NATO S MICROWAVE COM

[4] PERFORMANCE AND RELIABILITY OF AN IMPROVED HIGH-TEMPERATURE GAAS SCHOTTKY JUNCTION AND NATIVE-OXIDE PASSIVATION [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (06) : 698 - 704

[5] Campbell J. S., 1979, Fourth International Conference on Infrared and Millimeter Waves and their Applications, P80

[6] STUDIES OF TUNNEL MOS DIODES .1. INTERFACE EFFECTS IN SILICON SCHOTTKY DIODES [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1971, 4 (10) : 1589 - +

[7] SUB-HARMONICALLY PUMPED MILLIMETER-WAVE MIXERS [J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1978, 26 (10) : 706 - 715

[8] IMPURITY PROFILES OF GAAS EPITAXIAL LAYERS DOPED WITH SN, SI, AND GE GROWN WITH MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (04) : 1733 - 1735

[9] PHYSICAL SIGNIFICANCE OF TO ANOMALIES IN SCHOTTKY BARRIERS [J]. SOLID-STATE ELECTRONICS, 1977, 20 (03) : 171 - 175

[10] ERIKSON NR, 1979, THESIS U CALIFORNIA