PERFORMANCE AND RELIABILITY OF AN IMPROVED HIGH-TEMPERATURE GAAS SCHOTTKY JUNCTION AND NATIVE-OXIDE PASSIVATION

被引：10

作者：

CALVIELLO, JA ^{[1
]}

WALLACE, JL ^{[1
]}

机构：

[1] CUTLER HAMMER, DIV AIL, DEER PK, NY 11729 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1977年 / 24卷 / 06期

关键词：

D O I：

10.1109/T-ED.1977.18806

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：698 / 704

页数：7

共 19 条

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[3] HIGH-PERFORMANCE GAAS QUASI-PLANAR VARACTORS FOR MILLIMETER WAVES [J].

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[5]

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[8] NEW MICROWAVE MEASUREMENT TECHNIQUE TO CHARACTR AT ZERO VOLTS BIAS [J].

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[9] NEW ANODIC NATIVE OXIDE OF GAAS WITH IMPROVED DIELECTRIC AND INTERFACE PROPERTIES [J].

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[10]

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