ORIGIN OF LEAKAGE CURRENTS IN SILICON-ON-SAPPHIRE MOS-TRANSISTORS

[1] HIGH-PERFORMANCE LOW-POWER CMOS MEMORIES USING SILICON-ON-SAPPHIRE TECHNOLOGY [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1972, SC 7 (02) : 135 - &

[2] CULLEN CW, 1971, J CRYSTAL GROWTH, V9, P107

[3] DEFORMATION OF AND STRESS IN EPITAXIAL SILICON FILMS ON SINGLE-CRYSTAL SAPPHIRE [J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (09) : 2700 - &

[4] DIFFUSED DIODES IN SILICON-ON-SAPPHIRE [J]. SOLID-STATE ELECTRONICS, 1968, 11 (03) : 353 - +

[5] EERNISSE EP, 1973, SOLID STATE ELECTRON, V16, P315, DOI 10.1016/0038-1101(73)90004-X

[6] ION-IMPLANTATION IN SILICON FILMS ON SAPPHIRE [J]. APPLIED PHYSICS LETTERS, 1974, 24 (06) : 283 - 284

[7] FLATLEY DW, 1974, OCT ECS M NEW YORK

[8] Grove A S, 1967, PHYS TECHNOLOGY SEMI

[9] HAM WE, 1973, IEDM

[10] HARARI E, TO BE PUBLISHED

[1] HIGH-PERFORMANCE LOW-POWER CMOS MEMORIES USING SILICON-ON-SAPPHIRE TECHNOLOGY [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1972, SC 7 (02) : 135 - &

[2] CULLEN CW, 1971, J CRYSTAL GROWTH, V9, P107

[3] DEFORMATION OF AND STRESS IN EPITAXIAL SILICON FILMS ON SINGLE-CRYSTAL SAPPHIRE [J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (09) : 2700 - &

[4] DIFFUSED DIODES IN SILICON-ON-SAPPHIRE [J]. SOLID-STATE ELECTRONICS, 1968, 11 (03) : 353 - +

[5] EERNISSE EP, 1973, SOLID STATE ELECTRON, V16, P315, DOI 10.1016/0038-1101(73)90004-X

[6] ION-IMPLANTATION IN SILICON FILMS ON SAPPHIRE [J]. APPLIED PHYSICS LETTERS, 1974, 24 (06) : 283 - 284

[7] FLATLEY DW, 1974, OCT ECS M NEW YORK

[8] Grove A S, 1967, PHYS TECHNOLOGY SEMI

[9] HAM WE, 1973, IEDM

[10] HARARI E, TO BE PUBLISHED