INTERDEPENDENCE OF ELECTRICAL PROPERTIES AND DEFECT STRUCTURE IN HETEROEPITAXIAL GERMANIUM AND SILICON

被引：4

作者：

DUMIN, DJ

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1971年 / 8卷 / 01期

关键词：

D O I：

10.1116/1.1316293

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：235 / &

共 40 条

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[8] GROWTH AND PROPERTIES OF THIN GERMANIUM FILMS [J].

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[9] ACCEPTOR STATES DUE TO DEFECTS IN THIN GERMANIUM FILMS [J].

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[10] ELECTRICAL PROPERTIES OF SILICON FILMS GROWN EPITAXIALLY ON SAPPHIRE [J].

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