GROWTH AND PROPERTIES OF THIN GERMANIUM FILMS

被引：8

作者：

DUMIN, DJ

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1970年 / 117卷 / 01期

关键词：

D O I：

10.1149/1.2407452

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

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页码：95 / &

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[3] BOLTAKS BI, 1965, FIZ TVERD TELA+, V6, P2542
[4] INTRINSIC OPTICAL ABSORPTION IN GERMANIUM-SILICON ALLOYS
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[5] ELECTRICAL CHARACTERISTICS OF EPITAXIAL GERMANIUM FILMS VACUUM DEPOSITED ON SEMI-INSULATING GAAS UP TO THICKNESS OF 106 A - (DEPOSITION AT 475 AND 500 DEGREEES C RELATION OF CARRIER CONCENTRATION TO THICKNESS E)
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[7] ELECTRICAL PROPERTIES OF SILICON FILMS GROWN EPITAXIALLY ON SAPPHIRE
DUMIN, DJ
[J]. JOURNAL OF APPLIED PHYSICS, 1967, 38 (04) : 1909 - &
[8] DUMIN DJ, 1969, B AM PHYS SOC, V14, P394
[9] EPITAXIAL GROWTH OF GERMANIUM ON SINGLE CRYSTAL SPINEL
DUMIN, DJ
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (07) : 749 - &
[10] MEASUREMENT OF FILM THICKNESS USING INFRARED INTERFERENCE
DUMIN, DJ
[J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1967, 38 (08) : 1107 - &

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