共 23 条
- [1] WORK FUNCTION, PHOTOELECTRIC THRESHOLD, AND SURFACE STATES OF ATOMICALLY CLEAN SILICON [J]. PHYSICAL REVIEW, 1962, 127 (01): : 150 - &
- [2] DORDA G, 1973, FESTKORPERPROBLEME, V13, P215
- [3] ATOMIC GEOMETRY OF CLEAVAGE SURFACES OF TETRAHEDRALLY COORDINATED COMPOUND SEMICONDUCTORS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (04): : 761 - 768
- [5] CALCULATION OF LOW-ENERGY-ELECTRON-DIFFRACTION INTENSITIES FROM ZNO (1010) .2. INFLUENCE OF CALCULATIONAL PROCEDURE, MODEL POTENTIAL, AND 2ND-LAYER STRUCTURAL DISTORTIONS [J]. PHYSICAL REVIEW B, 1978, 18 (08): : 4225 - 4240
- [6] LOW-ENERGY-ELECTRON-DIFFRACTION ANALYSIS OF ATOMIC GEOMETRY OF ZNO(1010) [J]. PHYSICAL REVIEW B, 1977, 15 (10): : 4865 - 4873
- [7] VERY STRONG ACCUMULATION LAYERS ON ZNO SURFACES [J]. PHYSICS LETTERS A, 1975, 55 (03) : 197 - 198
- [8] THE INFRARED SPECTRUM OF HYDROGEN CHEMISORBED ON ZINC OXIDE [J]. JOURNAL OF CATALYSIS, 1962, 1 (02) : 180 - 191
- [9] THEORETICAL STUDIES OF SI AND GAAS SURFACES AND INITIAL STEPS IN OXIDATION [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (04): : 1274 - 1286
- [10] REACTIONS OF OXYGEN WITH ZNO-1010-SURFACES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (04): : 1298 - 1310