DEEP LEVEL TRANSIENT SPECTROSCOPY IN HG1-XCDXTE

被引:32
作者
POLLA, DL
JONES, CE
机构
[1] MIT,DEPT ELECT & COMP ENGN,CAMBRIDGE,MA 02139
[2] HONEYWELL INC,CTR CORPORATE MAT SCI,BLOOMINGTON,MN 55420
关键词
D O I
10.1016/0038-1098(80)90017-4
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:809 / 812
页数:4
相关论文
共 11 条
[1]   3-DIMENSIONAL POOLE-FRENKEL EFFECT [J].
HARTKE, JL .
JOURNAL OF APPLIED PHYSICS, 1968, 39 (10) :4871-&
[2]   SWITCHING TIME IN JUNCTION DIODES AND JUNCTION TRANSISTORS [J].
KINGSTON, RH .
PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1954, 42 (05) :829-834
[3]   FAST CAPACITANCE TRANSIENT APPARATUS - APPLICATION TO ZNO AND O CENTERS IN GAP PARANORMAL JUNCTIONS [J].
LANG, DV .
JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) :3014-3022
[4]   MINORITY-CARRIER-LIFETIME DETERMINATION IN HG0.68CD0.32TE [J].
LANIR, M ;
VANDERWYCK, AHB ;
WANG, CC .
JOURNAL OF APPLIED PHYSICS, 1978, 49 (12) :6182-6184
[5]   CASCADE CAPTURE OF ELECTRONS IN SOLIDS [J].
LAX, M .
PHYSICAL REVIEW, 1960, 119 (05) :1502-1523
[6]   ADMITTANCE SPECTROSCOPY OF IMPURITY LEVELS IN SCHOTTKY BARRIERS [J].
LOSEE, DL .
JOURNAL OF APPLIED PHYSICS, 1975, 46 (05) :2204-2214
[7]  
Milnes A., 1973, DEEP IMPURITIES SEMI
[8]   EFFECT OF ANNEALING TEMPERATURE ON CARRIER CONCENTRATION OF HG0.6CD0.4TE [J].
SCHMIT, JL ;
STELZER, EL .
JOURNAL OF ELECTRONIC MATERIALS, 1978, 7 (01) :65-81
[9]   STATISTICS OF THE RECOMBINATIONS OF HOLES AND ELECTRONS [J].
SHOCKLEY, W ;
READ, WT .
PHYSICAL REVIEW, 1952, 87 (05) :835-842
[10]  
SOOD AK, 1978, 1978 IEEE INT EL DEV