IN-SITU STUDY OF ION-BEAM-INDUCED SI CRYSTALLIZATION FROM A SILICIDE INTERFACE

被引：6

作者：

FORTUNA, F ^{[1
]}

RUAULT, MO ^{[1
]}

BERNAS, H ^{[1
]}

GU, H ^{[1
]}

COLLIEX, C ^{[1
]}

机构：

[1] UNIV PARIS 11,PHYS SOLIDES LAB,URA 2,F-91405 ORSAY,FRANCE

来源：

APPLIED SURFACE SCIENCE | 1993年 / 73卷

关键词：

D O I：

10.1016/0169-4332(93)90177-D

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

By first growing NiSi2 precipitates in amorphous Si (a-Si) and then irradiating with a 150 keV Si beam, we have studied ion beam induced epitaxial crystallization (IBIEC) of Si initiated at the a-Si/NiSi2 precipitate interface. We confirm our previous results regarding the existence of two, totally different mechanisms above and below 450 degrees C. Interface roughening, leading to practically isotropic growth, was shown to prevail in the lower temperature range. We present a detailed analysis of the growth process at 500 degrees C, via in situ transmission electron microscopy (TEM) and electron energy loss spectroscopy (EELS) which demonstrates that Si crystallization is then Ni silicide-mediated, leading to planar growth.

引用

页码：264 / 267

页数：4

共 8 条

[1] GROWTH-SITE-LIMITED CRYSTALLIZATION OF AMORPHOUS-SILICON [J].