TRANSFERRED ELECTRON PHOTOEMISSION TO 1.65-MU FROM AN INGAASP HETEROJUNCTION CATHODE

被引：13

作者：

ESCHER, JS

GREGORY, PE

ANTYPAS, GA

SANKARAN, R

HOUNG, YM

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1978年 / 49卷 / 01期

关键词：

D O I：

10.1063/1.324356

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：447 / 449

页数：3

相关论文

共 22 条

[1] GROWTH CHARACTERIZATION OF INP-INGAASP LATTICE-MATCHED HETEROJUNCTIONS
ANTYPAS, GA
MOON, RL
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (11) : 1574 - 1577
[2] HOT-ELECTRON EMISSION FROM SHALLO P-N JUNCTIONS IN SILICON
BARTELINK, D
MOLL, JL
MEYER, NI
[J]. PHYSICAL REVIEW, 1963, 130 (03): : 972 - +
[3] TRANSFERRED ELECTRON PHOTOEMISSION FROM INP
BELL, RL
JAMES, LW
MOON, RL
[J]. APPLIED PHYSICS LETTERS, 1974, 25 (11) : 645 - 646
[4] FIELD-ENHANCED PHOTOEMISSION FROM LARGE-AREA GE DIODES AT LOW TEMPERATURES
DAVIES, IG
THORNTON, PR
[J]. APPLIED PHYSICS LETTERS, 1967, 10 (09) : 249 - &
[5] DHAENENS IJ, 1974, DAAK0272C0442 CONTR
[6] Escher J. S., 1975, Critical Reviews in Solid State Sciences, V5, P577, DOI 10.1080/10408437508243514
[7] TRANSFERRED-ELECTRON PHOTOEMISSION TO 1.4 MU-M
ESCHER, JS
SANKARAN, R
[J]. APPLIED PHYSICS LETTERS, 1976, 29 (02) : 87 - 88
[8] ESCHER JS, 1973, DAAK0272C0412 CONTR
[9] FIELD-ENHANCED PHOTOELECTRON EMISSION FROM METAL-OXIDE-SEMICONDUCTOR STRUCTURES
FOSS, NA
[J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (10) : 3762 - &
[10] ITCH T, 1967, J APPL PHYS, V38, P3395