MINORITY-CARRIER INJECTION (DARK) METAL-POLYCRYSTALLINE SILICON CONTACTS

[1] ELECTRONIC PROCESSES AT GRAIN-BOUNDARIES IN POLYCRYSTALLINE SEMICONDUCTORS UNDER OPTICAL ILLUMINATION [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (04) : 397 - 402

[2] ON THE TRANSPORT-THEORY OF SCHOTTKY BARRIERS TO POLYCRYSTALLINE SILICON THIN-FILMS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (04) : 700 - 705

[3] THEORY OF GRAIN-BOUNDARY AND INTRAGRAIN RECOMBINATION CURRENTS IN POLYSILICON P-N-JUNCTION SOLAR-CELLS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (04) : 692 - 700

[4] HIROSE H, 1979, J APPL PHYS, V50, P377

[5] HALL MOBILITY IN CHEMICALLY DEPOSITED POLYCRYSTALLINE SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (11) : 4357 - &

[6] ZERO-BIAS RESISTANCE OF GRAIN-BOUNDARIES IN NEUTRON-TRANSMUTATION-DOPED POLYCRYSTALLINE SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (07) : 3879 - 3889

[7] STATISTICS OF THE RECOMBINATIONS OF HOLES AND ELECTRONS [J]. PHYSICAL REVIEW, 1952, 87 (05): : 835 - 842

[8] SZE SM, 1969, PHYSICS SEMICONDUCTO, P48

[9] YU AYC, 1969, SOLID STATE ELECTRON, V16, P365

[1] ELECTRONIC PROCESSES AT GRAIN-BOUNDARIES IN POLYCRYSTALLINE SEMICONDUCTORS UNDER OPTICAL ILLUMINATION [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (04) : 397 - 402

[2] ON THE TRANSPORT-THEORY OF SCHOTTKY BARRIERS TO POLYCRYSTALLINE SILICON THIN-FILMS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (04) : 700 - 705

[3] THEORY OF GRAIN-BOUNDARY AND INTRAGRAIN RECOMBINATION CURRENTS IN POLYSILICON P-N-JUNCTION SOLAR-CELLS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (04) : 692 - 700

[4] HIROSE H, 1979, J APPL PHYS, V50, P377

[5] HALL MOBILITY IN CHEMICALLY DEPOSITED POLYCRYSTALLINE SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (11) : 4357 - &

[6] ZERO-BIAS RESISTANCE OF GRAIN-BOUNDARIES IN NEUTRON-TRANSMUTATION-DOPED POLYCRYSTALLINE SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (07) : 3879 - 3889

[7] STATISTICS OF THE RECOMBINATIONS OF HOLES AND ELECTRONS [J]. PHYSICAL REVIEW, 1952, 87 (05): : 835 - 842

[8] SZE SM, 1969, PHYSICS SEMICONDUCTO, P48

[9] YU AYC, 1969, SOLID STATE ELECTRON, V16, P365