COMPUTER-ANALYSIS OF A SHORT-CHANNEL BC MOSFET

[1] CHATTERJEE PK, 1979, ISSCC 79, P22

[2] ELMANSY YA, 1978, IEDM, P20

[3] TRANSPORT PROPERTIES OF ELECTRONS IN INVERTED SILICON SURFACES [J]. PHYSICAL REVIEW, 1968, 169 (03): : 619 - +

[4] HAKEN RA, 1978, SOLID STATE ELECTRON, V21, P735

[5] 2-DIMENSIONAL MATHEMATICAL-MODEL OF INSULATED-GATE FIELD-EFFECT TRANSISTOR [J]. SOLID-STATE ELECTRONICS, 1973, 16 (05) : 601 - 609

[6] FEMTO JOULE LOGIC-CIRCUIT WITH ENHANCEMENT-TYPE SCHOTTKY-BARRIER GATE FET [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1976, 23 (09) : 1023 - 1027

[7] NISHIUCHI K, 1978, IEDM TECH DIG, P26

[8] FIELD-EFFECT TRANSISTOR VERSUS ANALOG TRANSISTOR (STATIC INDUCTION TRANSISTOR) [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, ED22 (04) : 185 - 197

[9] 2-DIMENSIONAL ANALYSIS OF SUBSTRATE EFFECTS IN JUNCTION FETS [J]. ELECTRONICS LETTERS, 1970, 6 (16) : 493 - &

[10] CONDUCTANCE OF ION-IMPLANTED BURIED-CHANNEL MOS-TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1976, 23 (12) : 1313 - 1319

[1] CHATTERJEE PK, 1979, ISSCC 79, P22

[2] ELMANSY YA, 1978, IEDM, P20

[3] TRANSPORT PROPERTIES OF ELECTRONS IN INVERTED SILICON SURFACES [J]. PHYSICAL REVIEW, 1968, 169 (03): : 619 - +

[4] HAKEN RA, 1978, SOLID STATE ELECTRON, V21, P735

[5] 2-DIMENSIONAL MATHEMATICAL-MODEL OF INSULATED-GATE FIELD-EFFECT TRANSISTOR [J]. SOLID-STATE ELECTRONICS, 1973, 16 (05) : 601 - 609

[6] FEMTO JOULE LOGIC-CIRCUIT WITH ENHANCEMENT-TYPE SCHOTTKY-BARRIER GATE FET [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1976, 23 (09) : 1023 - 1027

[7] NISHIUCHI K, 1978, IEDM TECH DIG, P26

[8] FIELD-EFFECT TRANSISTOR VERSUS ANALOG TRANSISTOR (STATIC INDUCTION TRANSISTOR) [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, ED22 (04) : 185 - 197

[9] 2-DIMENSIONAL ANALYSIS OF SUBSTRATE EFFECTS IN JUNCTION FETS [J]. ELECTRONICS LETTERS, 1970, 6 (16) : 493 - &

[10] CONDUCTANCE OF ION-IMPLANTED BURIED-CHANNEL MOS-TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1976, 23 (12) : 1313 - 1319