CONDUCTANCE OF ION-IMPLANTED BURIED-CHANNEL MOS-TRANSISTORS

被引：16

作者：

SCHEMMERT, W ^{[1
]}

GABLER, L ^{[1
]}

HOEFFLINGER, B ^{[1
]}

机构：

[1] UNIV DORTMUND,LEHRSTUHL BAUELEMENTE ELEKTROTECH,D-4600 DORTMUND 50,FED REP GER

来源：

关键词：

D O I：

10.1109/T-ED.1976.18655

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1313 / 1319

页数：7

共 17 条

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HOEFFLINGER, B
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ZIMMER, G
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ITOH, Y
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BARLEV, A
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[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1972, ED19 (07) : 861 - +
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