ANALYTICAL EXPRESSIONS FOR STATIC MOS-TRANSISTOR CHARACTERISTICS BASED ON GRADUAL CHANNEL MODEL

被引：11

作者：

KATTO, H ^{[1
]}

ITOH, Y ^{[1
]}

机构：

[1] HITACHI LTD,CENT RES LAB,KOKUBUNJI,TOKYO,JAPAN

来源：

SOLID-STATE ELECTRONICS | 1974年 / 17卷 / 12期

关键词：

D O I：

10.1016/0038-1101(74)90006-9

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：1283 / 1292

页数：10

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