PROPERTIES OF LIQUID-PHASE-DEPOSITED SIO2-FILMS FOR INTERLAYER DIELECTRICS IN ULTRALARGE-SCALE INTEGRATED-CIRCUIT MULTILEVEL INTERCONNECTIONS

Properties of a new fluorinated SiO2 film for interlayer dielectrics in multilevel interconnections of ultralarge-scale integrated circuits (ULSIs) are investigated. The fluorinated SiO2 films are formed at 35 degrees C by a liquid phase deposition (LPD) technique using a supersaturated hydrofluosilicic acid (H2SiF6) aqueous solution. The LPD SiO2 film surface profiles on polysilicon and aluminum wirings are flat enough, indicating that the LPD technique has good capability for the surface planarization of interlayer dielectric films. The compositions of as-deposited LPD SiO2 films and those annealed at 400 and 900 degrees C are SiO1.85F0.15, SiO1.85F0.15 and SIO1.90F0.10 respectively. The LPD SiO2 film deposition mechanism is explained as follows: (i) fluorosilanols [FnSi(OH)(4-n)] formation; (ii) fluorosilanol oligomer formation by a catalytic reaction in the solution; (iii) oligomer adsorption onto the substrate surface; (iv) oligomer polymerization by a catalytic reaction. The absorption peak position, full width at half-maximum (FWHM) and absorption coefficient for the Si-O bond in the Fourier transform infrared spectra for the as-deposited LPD SiO2 films are 9.17 mu m, 0.83 mu m and 1.19 x 10(6) m(-1), respectively, indicating that the films are formed by tightly bonded Si-O networks. The as-deposited LPD SiO2 films have a refractive index of 1.433, a density of 2.19 x 10(3) kg m(-3), an etching rate (measured using 1:30 buffered hydrofluoric acid (HF) solution) of 83 nm min(-1), and a residual stress of 20 MPa (tensile). The film shrinkages after annealing at 400 and 900 degrees C are 0.8% and 2.0% respectively. Although these properties are changed by annealing at 400 and 900 degrees C, these values are still better than those of SiO2 films deposited by chemical vapor deposition (CVD) at 400 degrees C for use as interlayer dielectric films. The LPD SiO2 films have better electrical properties, such as lower leakage current, higher dielectric breakdown strength (> 6.3 x 10(8) V m(-1)) and lower dielectric constant ( < 3.9 at 1 MHz), than the CVD SiO2 films.