学术探索
学术期刊
新闻热点
数据分析
智能评审
立即登录
STUDY ON THE INFLUENCE OF ANNEALING EFFECTS IN GAN VPE
被引:29
作者
:
FURTADO, M
论文数:
0
引用数:
0
h-index:
0
机构:
LABS ELECTR & PHYS APPL,F-94450 LIMEIL BREVANNES,FRANCE
LABS ELECTR & PHYS APPL,F-94450 LIMEIL BREVANNES,FRANCE
FURTADO, M
[
1
]
JACOB, G
论文数:
0
引用数:
0
h-index:
0
机构:
LABS ELECTR & PHYS APPL,F-94450 LIMEIL BREVANNES,FRANCE
LABS ELECTR & PHYS APPL,F-94450 LIMEIL BREVANNES,FRANCE
JACOB, G
[
1
]
机构
:
[1]
LABS ELECTR & PHYS APPL,F-94450 LIMEIL BREVANNES,FRANCE
来源
:
JOURNAL OF CRYSTAL GROWTH
|
1983年
/ 64卷
/ 02期
关键词
:
D O I
:
10.1016/0022-0248(83)90132-X
中图分类号
:
O7 [晶体学];
学科分类号
:
0702 ;
070205 ;
0703 ;
080501 ;
摘要
:
引用
收藏
页码:257 / 267
页数:11
相关论文
共 30 条
[1]
MASS SPECTROMETRIC STUDIES OF VAPOR-PHASE CRYSTAL GROWTH .2. GAN
BAN, VS
论文数:
0
引用数:
0
h-index:
0
BAN, VS
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1972,
119
(06)
: 761
-
&
[2]
THE CHEMICAL PREPARATION OF GALLIUM NITRIDE LAYERS AT LOW-TEMPERATURES
BORN, PJ
论文数:
0
引用数:
0
h-index:
0
BORN, PJ
ROBERTSON, DS
论文数:
0
引用数:
0
h-index:
0
ROBERTSON, DS
[J].
JOURNAL OF MATERIALS SCIENCE,
1980,
15
(12)
: 3003
-
3009
[3]
RECOMBINATION MECHANISMS IN GAN-ZN
BOULOU, M
论文数:
0
引用数:
0
h-index:
0
机构:
Laboratoire d'Electronique et de Physique Appliquée, 94450 Limeil-Brévannes, 3, Avenue Descartes
BOULOU, M
FURTADO, M
论文数:
0
引用数:
0
h-index:
0
机构:
Laboratoire d'Electronique et de Physique Appliquée, 94450 Limeil-Brévannes, 3, Avenue Descartes
FURTADO, M
JACOB, G
论文数:
0
引用数:
0
h-index:
0
机构:
Laboratoire d'Electronique et de Physique Appliquée, 94450 Limeil-Brévannes, 3, Avenue Descartes
JACOB, G
BOIS, D
论文数:
0
引用数:
0
h-index:
0
机构:
Laboratoire d'Electronique et de Physique Appliquée, 94450 Limeil-Brévannes, 3, Avenue Descartes
BOIS, D
[J].
JOURNAL OF LUMINESCENCE,
1979,
18-9
(JAN)
: 767
-
770
[4]
PROPERTIES OF GAN GROWN ON SAPPHIRE SUBSTRATES
CROUCH, RK
论文数:
0
引用数:
0
h-index:
0
CROUCH, RK
DEBNAM, WJ
论文数:
0
引用数:
0
h-index:
0
DEBNAM, WJ
FRIPP, AL
论文数:
0
引用数:
0
h-index:
0
FRIPP, AL
[J].
JOURNAL OF MATERIALS SCIENCE,
1978,
13
(11)
: 2358
-
2364
[5]
FURTADO M, 1978, THESIS U PARIS 7
[6]
EFFICIENT INJECTION MECHANISM FOR ELECTROLUMINESCENCE IN GAN
JACOB, G
论文数:
0
引用数:
0
h-index:
0
机构:
LABS ELECTR & PHYS APPL 3,F-94450 LIMEIL,FRANCE
LABS ELECTR & PHYS APPL 3,F-94450 LIMEIL,FRANCE
JACOB, G
BOIS, D
论文数:
0
引用数:
0
h-index:
0
机构:
LABS ELECTR & PHYS APPL 3,F-94450 LIMEIL,FRANCE
LABS ELECTR & PHYS APPL 3,F-94450 LIMEIL,FRANCE
BOIS, D
[J].
APPLIED PHYSICS LETTERS,
1977,
30
(08)
: 412
-
414
[7]
GAN ELECTROLUMINESCENT DEVICES - PREPARATION AND STUDIES
JACOB, G
论文数:
0
引用数:
0
h-index:
0
机构:
PHYS APPL LAB,F-94450 LIMEIL BREVANNES,FRANCE
JACOB, G
BOULOU, M
论文数:
0
引用数:
0
h-index:
0
机构:
PHYS APPL LAB,F-94450 LIMEIL BREVANNES,FRANCE
BOULOU, M
BOIS, D
论文数:
0
引用数:
0
h-index:
0
机构:
PHYS APPL LAB,F-94450 LIMEIL BREVANNES,FRANCE
BOIS, D
[J].
JOURNAL OF LUMINESCENCE,
1978,
17
(03)
: 263
-
282
[8]
OPTIMIZED GROWTH-CONDITIONS AND PROPERTIES OF N-TYPE AND INSULATING GAN
JACOB, G
论文数:
0
引用数:
0
h-index:
0
机构:
LABS ELECTR & PHYS APPL,F-94450 LIMEIL-BREVANNES,FRANCE
LABS ELECTR & PHYS APPL,F-94450 LIMEIL-BREVANNES,FRANCE
JACOB, G
MADAR, R
论文数:
0
引用数:
0
h-index:
0
机构:
LABS ELECTR & PHYS APPL,F-94450 LIMEIL-BREVANNES,FRANCE
LABS ELECTR & PHYS APPL,F-94450 LIMEIL-BREVANNES,FRANCE
MADAR, R
HALLAIS, J
论文数:
0
引用数:
0
h-index:
0
机构:
LABS ELECTR & PHYS APPL,F-94450 LIMEIL-BREVANNES,FRANCE
LABS ELECTR & PHYS APPL,F-94450 LIMEIL-BREVANNES,FRANCE
HALLAIS, J
[J].
MATERIALS RESEARCH BULLETIN,
1976,
11
(04)
: 445
-
450
[9]
GALLIUM NITRIDE EMITTING DEVICES PREPARATION AND PROPERTIES
JACOB, G
论文数:
0
引用数:
0
h-index:
0
机构:
LABS ELECTRON & PHYS APPLIQUEE,3 AVE DESCARTES,F-94450 LIMEIL BREVANNES,FRANCE
LABS ELECTRON & PHYS APPLIQUEE,3 AVE DESCARTES,F-94450 LIMEIL BREVANNES,FRANCE
JACOB, G
BOULOU, M
论文数:
0
引用数:
0
h-index:
0
机构:
LABS ELECTRON & PHYS APPLIQUEE,3 AVE DESCARTES,F-94450 LIMEIL BREVANNES,FRANCE
LABS ELECTRON & PHYS APPLIQUEE,3 AVE DESCARTES,F-94450 LIMEIL BREVANNES,FRANCE
BOULOU, M
FURTADO, M
论文数:
0
引用数:
0
h-index:
0
机构:
LABS ELECTRON & PHYS APPLIQUEE,3 AVE DESCARTES,F-94450 LIMEIL BREVANNES,FRANCE
LABS ELECTRON & PHYS APPLIQUEE,3 AVE DESCARTES,F-94450 LIMEIL BREVANNES,FRANCE
FURTADO, M
BOIS, D
论文数:
0
引用数:
0
h-index:
0
机构:
LABS ELECTRON & PHYS APPLIQUEE,3 AVE DESCARTES,F-94450 LIMEIL BREVANNES,FRANCE
LABS ELECTRON & PHYS APPLIQUEE,3 AVE DESCARTES,F-94450 LIMEIL BREVANNES,FRANCE
BOIS, D
[J].
JOURNAL OF ELECTRONIC MATERIALS,
1978,
7
(04)
: 499
-
514
[10]
EFFECT OF GROWTH PARAMETERS ON PROPERTIES OF GAN-ZN EPILAYERS
JACOB, G
论文数:
0
引用数:
0
h-index:
0
JACOB, G
BOULOU, M
论文数:
0
引用数:
0
h-index:
0
BOULOU, M
FURTADO, M
论文数:
0
引用数:
0
h-index:
0
FURTADO, M
[J].
JOURNAL OF CRYSTAL GROWTH,
1977,
42
(DEC)
: 136
-
143
←
1
2
3
→
共 30 条
[1]
MASS SPECTROMETRIC STUDIES OF VAPOR-PHASE CRYSTAL GROWTH .2. GAN
BAN, VS
论文数:
0
引用数:
0
h-index:
0
BAN, VS
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1972,
119
(06)
: 761
-
&
[2]
THE CHEMICAL PREPARATION OF GALLIUM NITRIDE LAYERS AT LOW-TEMPERATURES
BORN, PJ
论文数:
0
引用数:
0
h-index:
0
BORN, PJ
ROBERTSON, DS
论文数:
0
引用数:
0
h-index:
0
ROBERTSON, DS
[J].
JOURNAL OF MATERIALS SCIENCE,
1980,
15
(12)
: 3003
-
3009
[3]
RECOMBINATION MECHANISMS IN GAN-ZN
BOULOU, M
论文数:
0
引用数:
0
h-index:
0
机构:
Laboratoire d'Electronique et de Physique Appliquée, 94450 Limeil-Brévannes, 3, Avenue Descartes
BOULOU, M
FURTADO, M
论文数:
0
引用数:
0
h-index:
0
机构:
Laboratoire d'Electronique et de Physique Appliquée, 94450 Limeil-Brévannes, 3, Avenue Descartes
FURTADO, M
JACOB, G
论文数:
0
引用数:
0
h-index:
0
机构:
Laboratoire d'Electronique et de Physique Appliquée, 94450 Limeil-Brévannes, 3, Avenue Descartes
JACOB, G
BOIS, D
论文数:
0
引用数:
0
h-index:
0
机构:
Laboratoire d'Electronique et de Physique Appliquée, 94450 Limeil-Brévannes, 3, Avenue Descartes
BOIS, D
[J].
JOURNAL OF LUMINESCENCE,
1979,
18-9
(JAN)
: 767
-
770
[4]
PROPERTIES OF GAN GROWN ON SAPPHIRE SUBSTRATES
CROUCH, RK
论文数:
0
引用数:
0
h-index:
0
CROUCH, RK
DEBNAM, WJ
论文数:
0
引用数:
0
h-index:
0
DEBNAM, WJ
FRIPP, AL
论文数:
0
引用数:
0
h-index:
0
FRIPP, AL
[J].
JOURNAL OF MATERIALS SCIENCE,
1978,
13
(11)
: 2358
-
2364
[5]
FURTADO M, 1978, THESIS U PARIS 7
[6]
EFFICIENT INJECTION MECHANISM FOR ELECTROLUMINESCENCE IN GAN
JACOB, G
论文数:
0
引用数:
0
h-index:
0
机构:
LABS ELECTR & PHYS APPL 3,F-94450 LIMEIL,FRANCE
LABS ELECTR & PHYS APPL 3,F-94450 LIMEIL,FRANCE
JACOB, G
BOIS, D
论文数:
0
引用数:
0
h-index:
0
机构:
LABS ELECTR & PHYS APPL 3,F-94450 LIMEIL,FRANCE
LABS ELECTR & PHYS APPL 3,F-94450 LIMEIL,FRANCE
BOIS, D
[J].
APPLIED PHYSICS LETTERS,
1977,
30
(08)
: 412
-
414
[7]
GAN ELECTROLUMINESCENT DEVICES - PREPARATION AND STUDIES
JACOB, G
论文数:
0
引用数:
0
h-index:
0
机构:
PHYS APPL LAB,F-94450 LIMEIL BREVANNES,FRANCE
JACOB, G
BOULOU, M
论文数:
0
引用数:
0
h-index:
0
机构:
PHYS APPL LAB,F-94450 LIMEIL BREVANNES,FRANCE
BOULOU, M
BOIS, D
论文数:
0
引用数:
0
h-index:
0
机构:
PHYS APPL LAB,F-94450 LIMEIL BREVANNES,FRANCE
BOIS, D
[J].
JOURNAL OF LUMINESCENCE,
1978,
17
(03)
: 263
-
282
[8]
OPTIMIZED GROWTH-CONDITIONS AND PROPERTIES OF N-TYPE AND INSULATING GAN
JACOB, G
论文数:
0
引用数:
0
h-index:
0
机构:
LABS ELECTR & PHYS APPL,F-94450 LIMEIL-BREVANNES,FRANCE
LABS ELECTR & PHYS APPL,F-94450 LIMEIL-BREVANNES,FRANCE
JACOB, G
MADAR, R
论文数:
0
引用数:
0
h-index:
0
机构:
LABS ELECTR & PHYS APPL,F-94450 LIMEIL-BREVANNES,FRANCE
LABS ELECTR & PHYS APPL,F-94450 LIMEIL-BREVANNES,FRANCE
MADAR, R
HALLAIS, J
论文数:
0
引用数:
0
h-index:
0
机构:
LABS ELECTR & PHYS APPL,F-94450 LIMEIL-BREVANNES,FRANCE
LABS ELECTR & PHYS APPL,F-94450 LIMEIL-BREVANNES,FRANCE
HALLAIS, J
[J].
MATERIALS RESEARCH BULLETIN,
1976,
11
(04)
: 445
-
450
[9]
GALLIUM NITRIDE EMITTING DEVICES PREPARATION AND PROPERTIES
JACOB, G
论文数:
0
引用数:
0
h-index:
0
机构:
LABS ELECTRON & PHYS APPLIQUEE,3 AVE DESCARTES,F-94450 LIMEIL BREVANNES,FRANCE
LABS ELECTRON & PHYS APPLIQUEE,3 AVE DESCARTES,F-94450 LIMEIL BREVANNES,FRANCE
JACOB, G
BOULOU, M
论文数:
0
引用数:
0
h-index:
0
机构:
LABS ELECTRON & PHYS APPLIQUEE,3 AVE DESCARTES,F-94450 LIMEIL BREVANNES,FRANCE
LABS ELECTRON & PHYS APPLIQUEE,3 AVE DESCARTES,F-94450 LIMEIL BREVANNES,FRANCE
BOULOU, M
FURTADO, M
论文数:
0
引用数:
0
h-index:
0
机构:
LABS ELECTRON & PHYS APPLIQUEE,3 AVE DESCARTES,F-94450 LIMEIL BREVANNES,FRANCE
LABS ELECTRON & PHYS APPLIQUEE,3 AVE DESCARTES,F-94450 LIMEIL BREVANNES,FRANCE
FURTADO, M
BOIS, D
论文数:
0
引用数:
0
h-index:
0
机构:
LABS ELECTRON & PHYS APPLIQUEE,3 AVE DESCARTES,F-94450 LIMEIL BREVANNES,FRANCE
LABS ELECTRON & PHYS APPLIQUEE,3 AVE DESCARTES,F-94450 LIMEIL BREVANNES,FRANCE
BOIS, D
[J].
JOURNAL OF ELECTRONIC MATERIALS,
1978,
7
(04)
: 499
-
514
[10]
EFFECT OF GROWTH PARAMETERS ON PROPERTIES OF GAN-ZN EPILAYERS
JACOB, G
论文数:
0
引用数:
0
h-index:
0
JACOB, G
BOULOU, M
论文数:
0
引用数:
0
h-index:
0
BOULOU, M
FURTADO, M
论文数:
0
引用数:
0
h-index:
0
FURTADO, M
[J].
JOURNAL OF CRYSTAL GROWTH,
1977,
42
(DEC)
: 136
-
143
←
1
2
3
→