GAMMA-RAY DETECTORS WITH HGCDTE CONTACT LAYERS

被引：16

作者：

RYAN, FJ ^{[1
]}

SHIN, SH ^{[1
]}

EDWALL, DD ^{[1
]}

PASKO, JG ^{[1
]}

KHOSHNEVISAN, M ^{[1
]}

WESTMARK, CI ^{[1
]}

FULLER, C ^{[1
]}

机构：

[1] SANDIA NATL LABS,ALBUQUERQUE,NM 87185

来源：

APPLIED PHYSICS LETTERS | 1985年 / 46卷 / 03期

关键词：

D O I：

10.1063/1.95656

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：274 / 276

页数：3

共 9 条

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[3] EVALUTATION OF CDTE BY NUCLEAR PARTICLE MEASUREMENTS [J].

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[4]

MAYER JW, 1968, SEMICONDUCTOR DETECT, P495

[5]

RYAN FJ, UNPUB

[6] APPLICATIONS OF CDTE - REVIEW [J].

WALD, FV .

REVUE DE PHYSIQUE APPLIQUEE, 1977, 12 (02) :277-290

[7] LIQUID-PHASE GROWTH OF HGCDTE EPITAXIAL LAYERS [J].

WANG, CC ;

SHIN, SH ;

CHU, M ;

LANIR, M ;

VANDERWYCK, AHB .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (01) :175-179

[8] USE OF VARIOUS DEVICE GEOMETRIES TO IMPROVE PERFORMANCE OF CDTE DETECTORS [J].

ZANIO, K .

REVUE DE PHYSIQUE APPLIQUEE, 1977, 12 (02) :343-347

[9]

Zanio K, 1978, CADMIUM TELLURIDE, V13, P164

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